# US 10,121,574 B2 · Resistor and method for manufacturing resistor > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 10,121,574 B2 - Document ID: US10121574B2 - Status: Granted - Kind: B2 - Application number: 15/544,126 - Filed: 2016-01-27 - Published: 2018-01-11 - Granted: 2018-11-06 - Earliest claimed: 2015-01-28 - Assignees: Mitsubishi Materials Corporation - Applicants: Mitsubishi Materials Corporation - Inventors: Toshiyuki Nagase; Masahito Komasaki - Web page: https://patentgrep.com/patent/US10121574B2 ## CPC - H01C 1/144: the terminals or tapping points being welded or soldered - H01C 1/012: the base extending along and imparting rigidity or reinforcement to the resistive element (H01C1/016 takes precedence; the resistive element being formed in two or more coils or loops as a spiral, helical or toroidal winding H01C3/18, H01C3/20; the resistive element being formed as one or more layers or coatings on a base H01C7/00) - H01C 1/084: using self-cooling, e.g. fins, heat sinks - H01C 7/003: {Thick film resistors} - H01C 17/006: {adapted for manufacturing resistor chips} - H01C 17/28: adapted for applying terminals - H01C 1/028: the resistive element being embedded in insulation with outer enclosing sheath - H01C 17/02: adapted for manufacturing resistors with envelope or housing (apparatus or processes for filling or compressing insulating material in heating element tubes H05B3/52) - H01C: RESISTORS ## Abstract The resistor includes a chip resistive element which includes a resistive element and metal electrodes and which is formed on first surface of a ceramic substrate, metal terminals electrically joined to the metal electrodes, and an Al member formed on the second surface side of the ceramic substrate, wherein the ceramic substrate and the Al member are joined using an Al—Si-based brazing filler metal, the metal electrodes and the metal terminals are joined to each other using a solder, and a degree of bending of an opposite surface of the Al member opposite to a surface on the ceramic substrate side is in a range of −30 μm/50 mm to 700 μm/50 mm. ## Claims ### Claim 1 A resistor comprising: a chip resistive element which includes a resistive element and metal electrodes and which is formed on first surface of a ceramic substrate; metal terminals electrically joined to the metal electrodes; and an Al member formed on second surface side of the ceramic substrate, wherein the ceramic substrate and the Al member are joined to each other using an Al—Si-based brazing filler metal, the metal electrodes and the metal terminals are joined to each other using a solder, and a degree of bending of an opposite surface of the Al member opposite to a surface on the ceramic substrate side is in a range of −30 μm/50 mm to 700 μm/50 mm, wherein a thickness of the ceramic substrate is in a range of 0.3 mm to 1.0 mm, wherein a thickness of the Al member is in a range of 3.0 mm to 10.0 mm, and wherein a thickness of the metal electrodes is in a range of 2 μm or more and 3 μm or less. ### Claim 2 (depends on 1) The resistor according to claim 1, wherein the Al member is a laminate of a buffer layer made of Al having a purity of 99.98% by mass or more and a heat sink and the buffer layer and the second surface of the ceramic substrate are joined to each other using an Al—Si-based brazing filler metal. ### Claim 3 (depends on 2) The resistor according to claim 2, wherein a thickness of the buffer layer is in a range of 0.4 mm to 2.5 mm. ### Claim 4 (depends on 1) The resistor according to claim 1, wherein the chip resistive element, the metal electrodes, and the metal terminals are at least partially covered with an insulating sealing resin and the sealing resin is a resin having a coefficient of thermal expansion in a range of 8 ppm/° C. to 20 ppm/° C. ### Claim 5 (depends on 1) A method for manufacturing a resistor with which the resistor according to claim 1 is manufactured, comprising: a joining step of disposing an Al—Si-based brazing filler metal between the ceramic substrate and the Al member, heating the ceramic substrate and the Al member under pressure in a lamination direction, and joining the ceramic substrate and the Al member to each other using the brazing filler metal, thereby forming a joined body; a bending correction step of correcting bending of the Al member; and a terminal-joining step of joining metal electrodes to metal terminals, wherein a thickness of the ceramic substrate is in a range of 0.3 mm to 1.0 mm, wherein a thickness of the Al member is in a range of 3.0 mm to 10.0 mm, and wherein a thickness of the metal electrodes is in a range of 2 μm or more and 3 μm or less. ### Claim 6 (depends on 5) The method for manufacturing a resistor according to claim 5, wherein the bending correction step is a step of carrying out cold correction in which a correction jig having a predetermined curvature is brought into contact with the Al member side of the joined body and the joined body is pressed from the ceramic substrate side. ### Claim 7 (depends on 5) The method for manufacturing a resistor according to claim 5, wherein the bending correction step is a step of carrying out pressure cooling correction in which the joined body is sandwiched by flat correction jigs respectively disposed on the Al member side and the ceramic substrate side and is cooled to at least 0° or lower and is then returned to room temperature. ### Claim 8 (depends on 5) The method for manufacturing a resistor according to claim 5, wherein the bending correction step is a step of disposing a correction jig having a predetermined curvature on the Al member side prior to the joining step. ### Claim 9 (depends on 5) The method for manufacturing a resistor according to claim 5, further comprising: a sealing resin-forming step of disposing a mold so as to surround a circumference of the chip resistive element and loading a softened sealing resin to an inside of the mold. ### Claim 10 (depends on 1) The resistor according to claim 1, wherein the resistive element is consisting of Ta—Si or RuO2. ### Claim 11 (depends on 1) The resistor according to claim 1, wherein the metal electrodes are selected from a group consisting of Cu, a Cu alloy, Al, and Ag.