# US 10,121,564 B2 · Method for making transparent conductive layer > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 10,121,564 B2 - Document ID: US10121564B2 - Status: Granted - Kind: B2 - Application number: 15/662,251 - Filed: 2017-07-27 - Published: 2018-05-03 - Granted: 2018-11-06 - Earliest claimed: 2016-10-31 - Assignees: Tsinghua University; Hon Hai Precision Industry Co., Ltd. - Applicants: Tsinghua University; Hon Hai Precision Industry Co., Ltd. - Inventors: Dong-Qi Li; Yang Wei; Kai-Li Jiang; Shou-Shan Fan - Web page: https://patentgrep.com/patent/US10121564B2 ## CPC - H01B 1/04: mainly consisting of carbon-silicon compounds, carbon or silicon - H01B 5/14: comprising conductive layers or films on insulating-supports - H01B 13/0036: {Details} - H01J 37/28: with scanning beams {(H01J37/268, H01J37/292, H01J37/2955 take precedence)} - H10K 71/231: {by etching of existing layers} - H10K 71/621: {Providing a shape to conductive layers, e.g. patterning or selective deposition} - H10K 85/20: Carbon compounds, e.g. carbon nanotubes or fullerenes - H10K 85/221: {Carbon nanotubes} - H01J 2237/2813: characterised by the application - H10D 62/83: being Group IV materials, e.g. B-doped Si or undoped Ge - H10D 64/62: Electrodes ohmically coupled to a semiconductor - H10P 14/40: of conductive or resistive materials - H10P 50/267: {using plasmas} - H10P 74/203: {Structural properties, e.g. testing or measuring thicknesses, line widths, warpage, bond strengths or physical defects} - H01B: CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES (selection for magnetic properties H01F1/00; waveguides H01P {; printed circuits H05K}) - H01J: ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS (spark-gaps H01T; electric arc lamps H05B31/00; particle accelerators H05H) - H10K: ORGANIC ELECTRIC SOLID-STATE DEVICES - H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES - H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10 ## Abstract A method for making a transparent conductive layer comprising: providing a carbon nanotube film comprising a plurality of carbon nanotubes; providing a conductive substrate and applying an insulating layer on the conductive substrate; laying the carbon nanotube film on a surface of the insulating layer, and placing the carbon nanotube film under a scanning electron microscope; adjusting the scanning electron microscope, and taking photos of the carbon nanotube film with the scanning electron microscope; obtaining a photo of the carbon nanotube film, wherein the photo shows the plurality of carbon nanotubes and a background, a plurality of first carbon nanotubes of the plurality of carbon nanotubes have lighter color than a color of the background, a plurality of second carbon nanotubes of the plurality of carbon nanotubes have deeper color than the color of the background; and removing the plurality of second carbon nanotubes. ## Claims ### Claim 1 A method for making transparent conductive layer comprising: providing a carbon nanotube film comprising a plurality of carbon nanotubes; providing a conductive substrate and applying an insulating layer on the conductive substrate; laying the carbon nanotube film on a surface of the insulating layer, and placing the carbon nanotube film under a scanning electron microscope; adjusting the scanning electron microscope with an accelerating voltage ranging from about 5 KV to about 20 KV, a dwelling time ranging about 6 microseconds to about 20 microseconds and a magnification ranging from about 10000 times to about 100000 times, and taking photos of the carbon nanotube film with the scanning electron microscope; obtaining a photo of the carbon nanotube film, wherein the photo shows the plurality of carbon nanotubes and a background, a plurality of first carbon nanotubes of the plurality of carbon nanotubes have lighter color than a color of the background, a plurality of second carbon nanotubes of the plurality of carbon nanotubes have deeper color than the color of the background; and removing the plurality of second carbon nanotubes. ### Claim 2 (depends on 1) The method of claim 1, wherein a material of the conductive substrate is metal, conductive organic material, or a doped conductive material. ### Claim 3 (depends on 1) The method of claim 1, wherein a material of the conductive substrate is doped silicon, and a material of the insulating layer is silicon oxide. ### Claim 4 (depends on 1) The method of claim 1, wherein a material of the insulating layer is oxide or polymer material. ### Claim 5 (depends on 4) The method of claim 4, wherein a thickness of the insulating layer ranges from about 50 nanometers to about 300 nanometers. ### Claim 6 (depends on 1) The method of claim 1, wherein the plurality of carbon nanotubes comprises a plurality of metallic carbon nanotubes and a plurality of semiconducting carbon nanotubes. ### Claim 7 (depends on 6) The method of claim 6, wherein the plurality of carbon nanotubes are parallel with a surface of the insulating layer. ### Claim 8 (depends on 1) The method of claim 1, wherein the accelerating voltage is ranged from about 15 KV to about 20 kV. ### Claim 9 (depends on 1) The method of claim 1, wherein the dwelling time is in a range from 10 about microseconds to about 20 microseconds. ### Claim 10 (depends on 1) The method of claim 1, wherein the carbon nanotube film comprise a plurality of metallic carbon nanotubes with a color lighter than a color of the background and a plurality of semiconducting carbon nanotubes with a color deeper than the color of the background. ### Claim 11 (depends on 1) The method of claim 1, wherein the step of removing the plurality of second carbon nanotubes comprises: building a first coordinate system, placing the photo of the carbon nanotube film in the first coordinate system and reading coordinate values of the second carbon nanotubes in the first coordinate system; building a second coordinate system according to the same proportion on the carbon nanotube film as the photo of the carbon nanotube film, and identifying the plurality of second carbon nanotubes according to the coordinate values of the plurality of second carbon nanotubes in the first coordinate system; and removing the plurality of second carbon nanotubes. ### Claim 12 (depends on 11) The method of claim 11, wherein the metallic carbon nanotubes are protected by electron beam exposure, and the semiconductor-type carbon nanotubes are exposed. ### Claim 13 (depends on 12) The method of claim 12, wherein the semiconductor-type carbon nanotubes are removed by plasma etching. ### Claim 14 A method for making transparent conductive layer comprising: providing a carbon nanotube film comprising a plurality of carbon nanotubes and placing the carbon nanotube film under a scanning electron microscope; adjusting the scanning electron microscope with an accelerating voltage ranging from about 5 KV to about 20 KV, a dwelling time ranging about 6 microseconds to about 20 microseconds and a magnification ranging from about 10000 times to about 100000 times; taking photo of the carbon nanotube film with the scanning electron microscope to get a photo pf the carbon nanotube film, the photo shows the plurality of carbon nanotubes and a background, wherein a plurality of first carbon nanotubes have lighter color than a color of the background, a plurality of second carbon nanotubes have deeper color than the color of the background; and removing the plurality of second carbon nanotubes.