# US 10,120,967 B2 · Methods and apparatuses for SW programmable adaptive bias control for speed and yield improvement in the near/sub-threshold domain

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- Number: US 10,120,967 B2
- Document ID: US10120967B2
- Status: Granted
- Kind: B2
- Application number: 14/804,390
- Filed: 2015-07-21
- Published: 2016-09-29
- Granted: 2018-11-06
- Earliest claimed: 2014-07-25
- Assignees: PLSense Ltd.
- Applicants: Uzi Zangi; Neil Feldman
- Inventors: Uzi Zangi; Neil Feldman
- Web page: https://patentgrep.com/patent/US10120967B2

## CPC

- G06F 30/30: Circuit design
- G01R 31/2621: {for testing field effect transistors, i.e. FET's}
- G06F 2119/06: Power analysis or power optimisation
- G06F 2119/08: Thermal analysis or thermal optimisation
- H10B 10/12: {comprising a MOSFET load element}
- G06F: ELECTRIC DIGITAL DATA PROCESSING (computer systems based on specific computational models G06N)
- G01R: MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES (indicating correct tuning of resonant circuits H03J3/12)
- H10B: ELECTRONIC MEMORY DEVICES

## Abstract

A method for implementing a Semiconductor Integrated Circuit device using Near/Sub-threshold technology with SW programmable adaptive and dynamic forward and reverse bias voltage control using different sensors inside the chip in order to improve speed, reduce leakage and ensure high yield of the final product that operates at an ultra-low power consumption. This method allows achieving ultra-low power solution with reasonable higher speed and insure high yield.

## Claims

### Claim 1

A Semiconductor Integrated Circuit device, comprises one or more sensors located in the device configured to collect information about the device;
a computerized software configured to:
receive target speed and initial operating voltages;
read a temperature sensor output and a process monitor output;
check if a VT variance circuit output equals to VDD/2; if not, gradually change the value of the N-Well and P-Well voltages until a VT sensor output equals VDD/2;
set a first fail circuit to a target operating voltage and initial values for bias voltage of N-Well and P-Well;
check the status of a first fail circuit, if the test passes, gradually reduce a value of the P-Well (VPW) bias voltages and increasing a value of the N-Well (VNW) until the test of the first fail circuit fails;
returning the last values of the N-Well and P-Well voltages before the first fail circuit failed;
based on the temperature sensor output, a process monitor output and a VT variance monitor output, output a command to change bias forward and reverse voltage for the N-ch and P-ch transistors inside standard cell and static random access memory (SRAM) implementation;
digital-to-analog converters (DACs) connected to the N-ch and P-ch transistors, said DACs are configured to adjust forward and reverse biasing according to the command from the software;
wherein adjusting the forward and reverse biasing is performed during use of the transistors.

### Claim 2 (depends on 1)

The device of claim 1, wherein the Semiconductor Integrated Circuit device includes one or more logic cells or/and SRAM cells, where part or all of these cells are designed to work at an adaptive and dynamic change of the forward and reverse bias voltage.

### Claim 3 (depends on 2)

The device of claim 2, wherein the DACs are configured to control and adjust dynamically the N-Well and P-Well bias voltages of the different N-ch and P-ch transistor according to the software algorithm.

### Claim 4 (depends on 1)

The device of claim 1, wherein the number and structure of the one or more sensors depends on the size of the silicon and Near or Sub Threshold library implementation.

### Claim 5 (depends on 4)

The device of claim 4, wherein the sensors are read by the integrated or external CPU.

### Claim 6 (depends on 1)

The device of claim 1, wherein at least one of the one or more sensors is an environmental sensor.

### Claim 7

A method of regulating bias forward and reverse voltage of a Semiconductor Integrated Circuit device, comprising: receiving target speed and initial operating voltages; reading a temperature sensor output and a process monitor output; checking if a VT variance circuit output equals to VDD/2; if not, gradually changing the value of the N-Well and P-Well voltages until a VT sensor output equals VDD/2; setting a first fail circuit to a target operating voltage and initial values for bias voltage of N-Well and P-Well; checking the status of a first fail circuit, if the test passes, gradually reducing a value of the P-Well (VPW) bias voltages and increasing a value of the N-Well (VNW) until the test of the first fail circuit fails and returning the last values of the N-Well and P-Well voltages before the first fail circuit failed; combining inputs from multiple sensors located inside the device, and based on the inputs, adaptively and dynamically adjusting forward and reverse biasing of N-ch P-Well and P-ch N-Well transistors, wherein changing VT variant circuit output using on chip digital-to-analog converters (DACs), wherein the method is implemented on the fly using software that receives the inputs from the multiple sensors and output a command to the DACs, said DACs adjust the forward and reverse biasing according to the command from the software, wherein the method is performed during use of the transistors.

### Claim 8 (depends on 7)

The method of claim 7 wherein these VT variance sensors include structures, selected from a group consisting an Inverter, NAND and NOR structures.

### Claim 9 (depends on 7)

The method of claim 7, further comprises performing VT balancing between different transistor types (N-ch and P-ch) and different cell structures.