# US 10,120,593 B2 · Method of controlling temperature of non-volatile storage device > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 10,120,593 B2 - Document ID: US10120593B2 - Status: Granted - Kind: B2 - Application number: 15/160,212 - Filed: 2016-05-20 - Published: 2016-11-24 - Granted: 2018-11-06 - Earliest claimed: 2015-05-22 - Assignees: Samsung Electronics Co., Ltd. - Applicants: Samsung Electronics Co., Ltd. - Inventors: Jae-beom Byun; Hu Zhao; Jong-gyu Park; Do-il Kong; Chung-hyun Ryu; Eok-soo Shim - Web page: https://patentgrep.com/patent/US10120593B2 ## CPC - G06F 3/0616: {in relation to life time, e.g. increasing Mean Time Between Failures [MTBF]} - G06F 3/0613: {in relation to throughput} - G06F 3/0634: {by changing the state or mode of one or more devices} - G06F 3/0685: {Hybrid storage combining heterogeneous device types, e.g. hierarchical storage, hybrid arrays} - G11C 5/04: Supports for storage elements {, e.g. memory modules}; Mounting or fixing of storage elements on such supports - G11C 7/04: with means for avoiding disturbances due to temperature effects - G06F: ELECTRIC DIGITAL DATA PROCESSING (computer systems based on specific computational models G06N) - G11C: STATIC STORES (semiconductor memory devices H10B) ## Abstract A method of controlling a temperature of a non-volatile storage device includes determining whether the temperature of the non-volatile storage device is greater than a control engagement temperature, and adjusting a data I/O performance level P when the temperature of the non-volatile storage device is greater than the control engagement temperature. The non-volatile storage device may operate at the maximum performance level in a range in which the non-volatile storage device is protected from heat. ## Claims ### Claim 1 A method of controlling a temperature of a non-volatile storage device, the method comprising: detecting the temperature of the non-volatile storage device which is represented by a value measured by a temperature measuring sensor; determining whether the temperature of the non-volatile storage device is higher than a control engagement temperature; and adjusting a data I/O performance level P according to Formula 1 below if the temperature of the non-volatile storage device is higher than the control engagement temperature, P = P max × β × ( 1 - α ⁢ Δ ⁢ ⁢ T Δ ⁢ ⁢ T b ) ( 1 ) wherein, Pmax denotes a maximum data I/O performance level of the non-volatile storage device, ΔT denotes a difference between the temperature of the non-volatile storage device and a reference temperature, ΔTb denotes a difference between a maximum threshold temperature of the non-volatile storage device and the reference temperature, wherein ΔTb is greater than zero, and α and β are control parameters of the non-volatile storage device, the non-volatile storage device comprises: a substrate; and a memory controller, a volatile memory, and a non-volatile memory that are mounted on the substrate, and wherein the temperature measuring sensor is disposed on a surface of or adjacent to at least one of the memory controller, the volatile memory, the non-volatile memory, and the substrate, the memory controller is configured to receive a temperature value from the temperature measuring sensor, and based on the received temperature value, the memory controller is configured to control the data I/O performance level according to Formula 1. ### Claim 2 (depends on 1) The method of claim 1, wherein the data I/O performance level is a data I/O speed. ### Claim 3 (depends on 2) The method of claim 2, wherein the adjusting of the data I/O performance level P comprises controlling at least one of a number of data I/O channels and a number of ways, in order to control the data I/O speed. ### Claim 4 (depends on 2) The method of claim 2, wherein the adjusting of the data I/O performance level P comprises controlling a speed of a write/read operation with respect to the non-volatile storage device, in order to control the data I/O speed. ### Claim 5 (depends on 4) The method of claim 4, wherein the controlling of speed of the write/read operation with respect to the non-volatile storage device is performed according to a Tprog function. ### Claim 6 (depends on 1) The method of claim 1, wherein the reference temperature is lower than the control engagement temperature. ### Claim 7 (depends on 1) The method of claim 1, wherein the memory controller comprises a firmware capable of performing the determining of whether the temperature of the non-volatile storage device is higher than the control engagement temperature and the adjusting of the data I/O performance level P. ### Claim 8 (depends on 1) The method of claim 1, further comprising, after the adjusting of the data I/O performance level P: determining whether the temperature of the non-volatile storage device is lower than the control engagement temperature; and setting the data I/O performance level P to a maximum data I/O performance level Pmax if the temperature of the non-volatile storage device is lower than the control engagement temperature. ### Claim 9 (depends on 1) The method of claim 1, wherein the determining of whether the temperature of the non-volatile storage device is higher than the control engagement temperature is repeated at intervals. ### Claim 10 (depends on 9) The method of claim 9, wherein a period for the determining of whether the temperature of the non-volatile storage device is higher than the control engagement temperature is in a range of about one second to about one hour. ### Claim 11 (depends on 9) The method of claim 9, further comprising adjusting the data I/O performance level P according to Formula 1 if the temperature of the non-volatile storage device is higher than the control engagement temperature. ### Claim 12 A method of controlling a temperature of a non-volatile storage device, the non-volatile storage device comprising a substrate and a memory controller, a volatile memory, and a non-volatile memory that are mounted on the substrate, the method comprising: detecting a temperature at predetermined time intervals by using a temperature measuring sensor and sending a temperature value to the memory controller; and controlling, by using the memory controller, a speed of a write/read operation with respect to the non-volatile memory based on the temperature value, wherein the controlling of the speed of the write/read operation with respect to the non-volatile memory comprises: setting the write/read speed to a maximum value if the temperature is less than or equal to a control engagement temperature, and applying at least one of (a), (b), and (c) according to Formula 2 below if the temperature is higher than the control engagement temperature, P = P max × f ⁡ ( Δ ⁢ ⁢ T Δ ⁢ ⁢ T b ) ( 2 ) (a) reducing a number of data I/O channels; (b) reducing a number of data I/O ways; and (c) decreasing a speed of a data write/read operation with respect to the non-volatile memory, wherein P denotes a data I/O performance level, Pmax denotes a maximum data I/O performance level of the non-volatile storage device, ΔT denotes a difference between the temperature of the non-volatile storage device and a reference temperature, and ΔTb denotes a difference between a maximum threshold temperature of the non-volatile storage device and the reference temperature, wherein ΔTb is greater than zero, wherein the temperature measuring sensor is disposed on a surface of or adjacent to at least one of the memory controller, the volatile memory, the non-volatile memory, and the substrate. ### Claim 13 (depends on 12) The method of claim 12, wherein Formula 2 below is identical to Formula 1, P = P max × β × ( 1 - α ⁢ Δ ⁢ ⁢ T Δ ⁢ ⁢ T b ) ( 2 ) wherein, α and β are control parameters of the non-volatile storage device. ### Claim 14 (depends on 12) The method of claim 12, wherein the controlling of the speed of the write/read operation with respect to the non-volatile memory comprises applying (c) decreasing the speed of the data write/read operation with respect to the non-volatile memory. ### Claim 15 (depends on 14) The method of claim 14, wherein the decreasing the speed of the data write/read operation with respect to the non-volatile memory is performed according to a Tprog function. ### Claim 16 A method of controlling a temperature of a non-volatile storage device, the non-volatile storage device comprising a substrate; and a memory controller, a volatile memory, and a non-volatile memory that are mounted on the substrate, the method comprising: setting a data I/O performance level to a maximum level; detecting the temperature of the non-volatile storage device using a temperature measuring sensor disposed on a surface of or adjacent to at least one of the memory controller, the volatile memory, the non-volatile memory, and the substrate; determining whether the temperature of the non-volatile storage device is higher than a control engagement temperature; and adjusting the data I/O performance level to a value lower than the maximum level if the temperature of the non-volatile storage device is higher than the control engagement temperature, or keeping the data I/O performance level at the maximum level if the temperature of the non-volatile storage device is equal to or lower than the control engagement temperature, wherein the non-volatile storage device includes a NAND memory, and the adjusting of the data I/O performance level comprises controlling a speed of a write/read operation with respect to the non-volatile storage device by using a Tprog function, in order to control data I/O speed. ### Claim 17 (depends on 16) The method of claim 16, wherein adjusting the data I/O performance level P includes adjusting the data I/O performance level according to Formula 1 below P = P max × β × ( 1 - α ⁢ Δ ⁢ ⁢ T Δ ⁢ ⁢ T b ) ( 1 ) wherein Pmax denotes the maximum level of the data I/O performance level of the non-volatile storage device, ΔT denotes a difference between the temperature of the non-volatile storage device and a reference temperature, ΔTb denotes a difference between a maximum threshold temperature of the non-volatile storage device and the reference temperature, wherein ΔTb is greater than zero, and α and β are control parameters of the non-volatile storage device.