# US 10,120,584 B2 · Semiconductor memory device including a control circuit and at least two memory cell arrays

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- Number: US 10,120,584 B2
- Document ID: US10120584B2
- Status: Granted
- Kind: B2
- Application number: 15/184,677
- Filed: 2016-06-16
- Published: 2016-10-13
- Granted: 2018-11-06
- Earliest claimed: 2014-03-14
- Assignees: Toshiba Memory Corporation
- Applicants: Toshiba Memory Corporation
- Inventors: Masanobu Shirakawa; Tokumasa Hara
- Web page: https://patentgrep.com/patent/US10120584B2

## CPC

- G06F 3/061: {Improving I/O performance}
- G06F 3/0634: {by changing the state or mode of one or more devices}
- G06F 3/0656: {Data buffering arrangements}
- G06F 3/0659: {Command handling arrangements, e.g. command buffers, queues, command scheduling}
- G06F 3/0679: {Non-volatile semiconductor memory device, e.g. flash memory, one time programmable memory [OTP]}
- G06F 12/0875: with dedicated cache, e.g. instruction or stack
- G06F 13/16: for access to memory bus (G06F13/28 takes precedence)
- G11C 7/1063: {Control signal output circuits, e.g. status or busy flags, feedback command signals}
- G11C 16/10: Programming or data input circuits
- G11C 16/26: Sensing or reading circuits; Data output circuits
- G06F 2212/1016: Performance improvement
- G06F 2212/214: Solid state disk
- G06F 2212/452: Instruction code
- G06F 2212/7203: Temporary buffering, e.g. using volatile buffer or dedicated buffer blocks
- G06F 2212/7207: management of metadata or control data
- G11C 7/24: Memory cell safety or protection circuits, e.g. arrangements for preventing inadvertent reading or writing; Status cells; Test cells
- G06F: ELECTRIC DIGITAL DATA PROCESSING (computer systems based on specific computational models G06N)
- G11C: STATIC STORES (semiconductor memory devices H10B)

## Abstract

A memory device includes memory cell array including a first and second plane and first and second caches. A controller is configured to output status information in response to a status read command. The status information indicating the states of the caches. The controller begins a first process in response to a command addressed to the first plane if the status information indicates the first and second caches are in the ready state, and begins a second process on the second plane according to a second command to the second plane if the status information indicates at least the second cache is in the ready state.

## Claims

### Claim 1

A semiconductor memory device, comprising:
a memory cell array including a first plane and a second plane;
a first cache configured to hold data transferred from the first plane of the memory cell array;
a second cache configured to hold data transferred from the second plane of the memory cell array; and
a controller connected to the memory cell array and configured to output status information in response to a status read command, the status information indicating whether the first cache is in a ready state or a busy state and whether the second cache is in a ready state or a busy state, wherein
the controller is further configured to begin a first process on the first plane in response to a first command addressed to the first plane if the status information indicates the first and second caches are in the ready state when the first command is received, and to begin a second process on the second plane of the memory cell array according to a second command addressed to the second plane if the status information indicates at least the second cache is in the ready state, and
the controller is further configured to determine whether a core operation associated with the second command can be performed simultaneously with a core operation associated with the first command if the second command is received while the status information indicates the first cache is in the busy state and the second cache is in the ready state, the determination being made based on whether the core operation associated with the first command has started or not and a comparison of physical address targets of the first and second commands.

### Claim 2 (depends on 1)

The device according to claim 1, further comprising:
a first pad at which the controller is configured to output the status information and to receive the status read command, the first command, and the second command.

### Claim 3 (depends on 2)

The device according to claim 2, wherein the status information is output from the controller as a series of bits in response to the status read command.

### Claim 4 (depends on 3)

The device according to claim 3, wherein a total of eight bits are in the series of bits.

### Claim 5 (depends on 1)

The device according to claim 1, wherein the status information comprises a first status bit indicating whether the first plane is ready or busy, a second status bit indicating whether the second plane is ready or busy, a third status bit indicating whether the first cache is in the ready state or busy state, a fourth status bit indicating whether the second cache is in the ready or busy state.

### Claim 6 (depends on 1)

The device according to claim 1, wherein
the first command is a read command, and
the second command is a read command.

### Claim 7 (depends on 1)

The device according to claim 1, wherein
the first cache is further configured to hold data transferred from the second plane of the memory cell array,
the second cache is further configured to hold data transferred from the second plane of the memory cell array, and
the status information includes a queue busy status bit and a cache busy status bit.

### Claim 8

A method of notifying availability of data reads by a semiconductor memory device including first and second memory cell arrays and a control circuit, said method comprising:
in response to a status read command, outputting first status information indicating whether the first memory cell array is in a ready state in which the control circuit is ready to receive a command to access the first memory cell array or a busy state in which the control circuit is not ready to receive the command to access the first memory cell array, and second status information indicating whether the second memory cell array is in a ready state in which the control circuit is ready to receive a command to access the second memory cell array or a busy state in which the control circuit is not ready to receive the command to access the second memory cell array;
beginning a first process on the first memory cell array in response to a first command addressed to the first memory cell array if the first and second information indicates the first and second memory cell arrays are in the ready state, and beginning a second process on the second memory cell array according to a second command addressed to the second memory cell array if the first and second status information indicates at least the second memory cell array is in the ready state; and
determining whether a core operation associated with the second command can be performed simultaneously with a core operation associated with the first command if the second command is received while the status information indicates the first memory cell array is in the busy state and the second memory cell array is in the ready state, the determination being made based on whether the core operation associated with the first command has started or not and a comparison of physical address targets of the first and second commands.

### Claim 9 (depends on 8)

The method according to claim 8, wherein
the semiconductor device further includes first and second caches that respectively hold data transferred from the first and second memory cell arrays, and
when the first status information indicates that the first memory cell array is in the ready state, the first cache is accessible from outside the device, and when the second status information indicates that the second memory cell array is in the ready state, the second cache is accessible from outside the device.

### Claim 10 (depends on 8)

The method according to claim 8, wherein the first status information and the second status information are output as signals on a pair of output pads of the semiconductor memory device.

### Claim 11 (depends on 8)

The method according to claim 8, wherein the first status information and the second status information are output as a plurality of bits on an input/output line of the semiconductor memory device.