# US 10,120,287 B2 · Particle irradiation apparatus, beam modifier device, and semiconductor device including a junction termination extension zone

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- Number: US 10,120,287 B2
- Document ID: US10120287B2
- Status: Granted
- Kind: B2
- Application number: 15/249,758
- Filed: 2016-08-29
- Published: 2017-03-02
- Granted: 2018-11-06
- Earliest claimed: 2015-08-28
- Assignees: Infineon Technologies AG
- Applicants: Infineon Technologies AG
- Inventors: Roland Rupp; Rudolf Elpelt; Romain Esteve
- Web page: https://patentgrep.com/patent/US10120287B2

## CPC

- G03F 7/70008: {Production of exposure light, i.e. light sources}
- G03F 7/70775: {Position control, e.g. interferometers or encoders for determining the stage position}
- H01J 37/3171: {for ion implantation}
- H10D 8/051: {of Schottky diodes}
- H10D 8/411: {PN diodes having planar bodies}
- H10D 12/031: {of IGBTs}
- H10D 62/105: {by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE] (IGFETs having LDD or drain extension regions H10D30/601)}
- H10D 62/60: Impurity distributions or concentrations
- H10D 62/8325: {Silicon carbide}
- H10P 30/22: using masks
- H10P 76/204: {of organic photoresist masks}
- H10W 46/00: Marks applied to devices, e.g. for alignment or identification
- H10W 46/301: {for alignment}
- H10W 46/503: {Located in scribe lines}
- G03F: PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR; (phototypographic composing devices B41B; photosensitive materials or processes for photographic purposes G03C; electrophotography, sensitive layers or processes therefor G03G)
- H01J: ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS (spark-gaps H01T; electric arc lamps H05B31/00; particle accelerators H05H)
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10

## Abstract

A beam modifier device is provided that includes scattering portions in which particles vertically impinging on an exposure surface of the beam modifier device are deflected from a vertical direction. A total permeability for the particles changes along a lateral direction parallel to the exposure surface.

## Claims

### Claim 1

A beam modifier device, comprising:
scattering portions at a patterned surface and in which particles vertically impinging on an exposure surface of the beam modifier device are deflected from a vertical direction, wherein the patterned surface and the exposure surface are surfaces opposite to each other; and
shading portions at the patterned surface in which a permeability for the particles is lower than in the scattering portions, wherein the shading portions and the scattering portions alternate on an individual basis along a lateral direction parallel to the exposure surface, and an area ratio of each successive shading portion changes along the lateral direction, wherein the area ratio is an area of the patterned surface occupied by a respective shading portion per unit area,
wherein each of the scattering portions has a different permeability such that the permeability for the particles changes along the lateral direction parallel to the exposure surface with respect to each scattering portion.

### Claim 2 (depends on 1)

The beam modifier device of claim 1, wherein the shading portions are impermeable for particles with molecular weight equal to or greater than five at a kinetic energy of at most 2 MeV.

### Claim 3 (depends on 1)

The beam modifier device of claim 1, wherein, in the shading portions, a vertical extension of the beam modifier device is uniform.

### Claim 4 (depends on 1)

The beam modifier device of claim 1, wherein a maximum vertical extension of the beam modifier device in the scattering portions does not exceed a minimum vertical extension in the shading portions.

### Claim 5 (depends on 1)

The beam modifier device of claim 1, wherein the shading portions and the scattering portions are formed in termination regions of device regions, the termination regions surrounding central regions of the device regions, respectively.

### Claim 6 (depends on 5)

The beam modifier device of claim 5, further comprising:
a grid-like idle region devoid of scattering portions and separating the device regions.

### Claim 7 (depends on 5)

The beam modifier device of claim 5, wherein the grid-like idle region comprises an opening vertically extending through the beam modifier device.

### Claim 8 (depends on 5)

The beam modifier device of claim 5, wherein a width of the shading portions of a device region increases with increasing distance from the central region of the device region.

### Claim 9 (depends on 5)

The beam modifier device of claim 5, wherein the termination region includes at least three circumferential scattering portions separated by circumferential shading portions, respectively.

### Claim 10 (depends on 5)

The beam modifier device of claim 5, wherein the central regions include at least one scattering portion, respectively.

### Claim 11 (depends on 5)

The beam modifier device of claim 5, wherein a width of each successive scattering portion of a device region decreases in the lateral direction with increasing distance from the central region of the device region.

### Claim 12 (depends on 1)

The beam modifier device of claim 1, wherein each of the scattering portions comprise dents separated by protrusions.

### Claim 13 (depends on 5)

The beam modifier device of claim 5, wherein each of the scattering portions comprise dents separated by protrusions, and the protrusions surround the central regions.

### Claim 14 (depends on 12)

The beam modifier device of claim 12, wherein, for each successive scattering portion in the lateral direction, the dents have different vertical extensions and a distance between the dents and the exposure surface varies along the lateral direction such that the permeability of each successive scattering portion changes along the lateral direction.

### Claim 15 (depends on 12)

The beam modifier device of claim 12, wherein, for each successive scattering portion in the lateral direction, the dents have equal vertical extensions into the beam modifier device.

### Claim 16 (depends on 12)

The beam modifier device of claim 12, wherein a vertical cross-sectional area of the protrusions is a triangle or a trapezoid.

### Claim 17 (depends on 1)

The beam modifier device of claim 1, further comprising:
an opening vertically extending through the beam modifier device.

### Claim 18

A particle irradiation apparatus, comprising:
a particle source configured to emit particles;
an acceleration unit configured to accelerate the emitted particles to form a particle beam; and
a beam modifier device configured to receive the particle beam, the beam modifier comprises:
scattering portions at a patterned surface and in which particles vertically impinging on an exposure surface of the beam modifier device are deflected from a vertical direction, wherein the patterned surface and the exposure surface are surfaces opposite to each other; and
shading portions at the patterned surface in which a permeability for the particles is lower than in the scattering portions, wherein the shading Portions and the scattering portions alternate on an individual basis along a lateral direction parallel to the exposure surface, and an area ratio of each successive shading portion changes along the lateral direction, wherein the area ratio is an area of the patterned surface occupied by a respective shading portion per unit area,
wherein each of the scattering portions has a different permeability such that the permeability for the particles changes along the lateral direction parallel to the exposure surface with respect to each scattering portion.

### Claim 19

A method of manufacturing a semiconductor device, the method comprising:
generating a particle beam; and
modifying the particle beam by use of a beam modifier device, wherein shading portions of the beam modifier device attenuate first partial beams of the particle beam and scattering portions of the beam modifier device scatter second partial beams of the particle beam, wherein cones of the second partial beams passing through neighboring ones of the scattering portions overlap in a semiconductor substrate in a plane perpendicular to a propagation direction of the particle beam,
wherein an area ratio of each successive shading portion changes along the lateral direction, where the area ratio is an area of the patterned surface occupied by a respective shading portion per unit area, and
wherein each of the scattering portions has a different permeability such that permeability for the particle beam changes along the lateral direction with respect to each scattering portion.

### Claim 20 (depends on 19)

The method of claim 19, further comprising:
generating a high-dose particle beam passing through openings in the beam modifier device to amorphize alignment zones in the semiconductor substrate.

### Claim 21 (depends on 19)

The method of claim 19, further comprising:
aligning a photomask for forming structures in the semiconductor substrate to alignment marks formed from the alignment zones.

### Claim 22 (depends on 1)

The beam modifier device of claim 1, wherein, as the area ratio for each successive shading portion increases along the lateral direction, the permeability for the particles decreases for each successive scattering portion along the lateral direction.

### Claim 23 (depends on 18)

The particle irradiation apparatus of claim 18, wherein, as the area ratio for each successive shading portion increases along the lateral direction, the permeability for the particles decreases for each successive scattering portion along the lateral direction.

### Claim 24 (depends on 19)

The method of claim 19, wherein, as the area ratio for each successive shading portion increases along the lateral direction, the permeability for the particle beam decreases for each successive scattering portion along the lateral direction.