# US 10,120,277 B2 · Radiation-sensitive composition and pattern-forming method

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- Number: US 10,120,277 B2
- Document ID: US10120277B2
- Status: Granted
- Kind: B2
- Application number: 15/436,009
- Filed: 2017-02-17
- Published: 2017-08-24
- Granted: 2018-11-06
- Earliest claimed: 2016-02-19
- Assignees: Jsr Corporation; Cornell University
- Applicants: Jsr Corporation; Cornell University
- Inventors: Kazuki Kasahara; Vasiliki Kosma; Jeremy Odent; Hong Xu; Mufei Yu; Emmanuel P. Giannelis; Christopher K. Ober
- Web page: https://patentgrep.com/patent/US10120277B2

## CPC

- G03F 7/0043: {Chalcogenides; Silicon, germanium, arsenic or derivatives thereof; Metals, oxides or alloys thereof (G03F7/0044 takes precedence)}
- B32B 5/16: characterised by features of a layer formed of particles, e.g. chips, powder {or granules (layer formed of natural mineral particles B32B19/00; layer being formed of wood fibres, chips or particles B32B21/02)}
- G03F 7/0042: {with inorganic or organometallic light-sensitive compounds not otherwise provided for, e.g. inorganic resists (G03F7/075 takes precedence)}
- G03F 7/0045: {with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors}
- G03F 7/092: {characterised by backside coating or layers, by lubricating-slip layers or means, by oxygen barrier layers or by stripping-release layers or means}
- G03F 7/162: {Coating on a rotating support, e.g. using a whirler or a spinner}
- G03F 7/168: {Finishing the coated layer, e.g. drying, baking, soaking}
- G03F 7/2004: {characterised by the use of a particular light source, e.g. fluorescent lamps or deep UV light}
- G03F 7/2037: {Exposure with X-ray radiation or corpuscular radiation, through a mask with a pattern opaque to that radiation}
- G03F 7/322: {Aqueous alkaline compositions}
- G03F 7/325: {Non-aqueous compositions}
- G03F 7/38: Treatment before imagewise removal, e.g. prebaking {(G03F7/265 takes precedence)}
- G03F: PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR; (phototypographic composing devices B41B; photosensitive materials or processes for photographic purposes G03C; electrophotography, sensitive layers or processes therefor G03G)
- B32B: LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM

## Abstract

A radiation-sensitive composition includes particles including a metal oxide as a principal component, and an organic solvent. A metal atom constituting the metal oxide includes a first metal atom that is a zinc atom, a boron atom, an aluminum atom, a gallium atom, a thallium atom, a germanium atom, an antimony atom, a bismuth atom, a tellurium atom, or a combination thereof. A percentage content of the first metal atom with respect to total metal atoms in the radiation-sensitive composition is no less than 50 atomic %. A pattern-forming method includes applying the radiation-sensitive composition to form a film on a substrate, exposing the film, and developing the film exposed.

## Claims

### Claim 1

A radiation-sensitive composition comprising:
particles comprising a metal oxide as a principal component;
a radiation-sensitive acid generator selected from the group consisting of a N-sulfonyloxyimide compound, a diazo ketone compound, and a combination thereof; and
an organic solvent,
wherein:
the metal oxide comprises at least one metal atom selected from the group consisting of a zinc atom, a boron atom, an aluminum atom, a gallium atom, a thallium atom, a germanium atom, an antimony atom, a bismuth atom, and a tellurium atom;
a van der Waals volume of an acid generated from the radiation-sensitive acid generator is less than 2.0×10−28 m3; and
a percentage content of the at least one metal atom with respect to total metal atoms in the radiation-sensitive composition is no less than 50 atomic %.

### Claim 2 (depends on 1)

The radiation-sensitive composition according to claim 1, wherein an average particle diameter of the particles is no greater than 20 nm.

### Claim 3 (depends on 1)

The radiation-sensitive composition according to claim 1, wherein the particles further comprise a ligand derived from an organic acid.

### Claim 4 (depends on 3)

The radiation-sensitive composition according to claim 3, wherein the organic acid is at least one selected from the group consisting of a carboxylic acid, a sulfonic acid, a sulfinic acid, an organic phosphinic acid, an organic phosphonic acid, a phenol, an enol, a thiol, an acid imide, an oxime, and a sulfonamide.

### Claim 5 (depends on 3)

The radiation-sensitive composition according to claim 3, wherein the organic acid is a carboxylic acid.

### Claim 6 (depends on 3)

The radiation-sensitive composition according to claim 3, wherein the organic acid is a monocarboxylic acid.

### Claim 7 (depends on 3)

The radiation-sensitive composition according to claim 3, wherein the organic acid is at least one selected from the group consisting of methacrylic acid, tiglic acid, benzoic acid, m-toluic acid, o-toluic acid, and 3-iodobenzoic acid.

### Claim 8 (depends on 3)

The radiation-sensitive composition according to claim 3, wherein a percentage content of the ligand derived from the organic acid is from 40 to 95% by mass.

### Claim 9 (depends on 3)

The radiation-sensitive composition according to claim 3, wherein a percentage content of the ligand derived from the organic acid is from 60 to 90% by mass.

### Claim 10 (depends on 1)

The radiation-sensitive composition according to claim 1, wherein the metal oxide comprises zinc and a ligand derived from benzoic acid.

### Claim 11 (depends on 1)

The radiation-sensitive composition according to claim 1, wherein the percentage content of the at least one metal atom with respect to the total metal atoms in the radiation-sensitive composition is no less than 80 atomic %.

### Claim 12 (depends on 1)

The radiation-sensitive composition according to claim 1, wherein the percentage content of the at least one metal atom with respect to the total metal atoms in the radiation-sensitive composition is no less than 95 atomic %.

### Claim 13 (depends on 1)

The radiation-sensitive composition according to claim 1, wherein the number of the at least one metal atom in the particles is from 2 to 6.

### Claim 14 (depends on 1)

A pattern-forming method comprising:
applying the radiation-sensitive composition according to claim 1 to form a film on a substrate;
exposing the film; and
developing the film exposed.

### Claim 15 (depends on 14)

The pattern-forming method according to claim 14, wherein a developer solution used in the developing is an alkaline aqueous solution.

### Claim 16 (depends on 15)

The pattern-forming method according to claim 15, wherein a radioactive ray used in the exposing is an extreme ultraviolet ray or an electron beam.

### Claim 17 (depends on 14)

The pattern-forming method according to claim 14, wherein a developer solution used in the developing is an organic solvent-containing liquid.

### Claim 18 (depends on 17)

The pattern-forming method according to claim 17, wherein a radioactive ray used in the exposing is an extreme ultraviolet ray or an electron beam.

### Claim 19 (depends on 14)

The pattern-forming method according to claim 14, wherein a radioactive ray used in the exposing is an extreme ultraviolet ray or an electron beam.

### Claim 20 (depends on 3)

The radiation-sensitive composition according to claim 3, wherein the radiation-sensitive composition consists of:
the particles;
the radiation-sensitive acid generator;
the solvent;
optionally, a ligand other than the ligand derived from the organic acid; and
optionally, a surfactant.
