# US 10,120,275 B2 · Layout method of mask pattern, manufacturing method of a semiconductor device and exposure mask > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 10,120,275 B2 - Document ID: US10120275B2 - Status: Granted - Kind: B2 - Application number: 15/255,399 - Filed: 2016-09-02 - Published: 2017-11-16 - Granted: 2018-11-06 - Earliest claimed: 2016-05-12 - Assignees: Toshiba Memory Corporation - Applicants: Toshiba Memory Corporation - Inventors: Masakazu Hamasaki; Yoshihiro Yanai; Michiya Takimoto; Naoki Sato; Satoshi Usui; Takaki Hashimoto - Web page: https://patentgrep.com/patent/US10120275B2 ## CPC - G03F 1/36: Masks having proximity correction features; Preparation thereof, e.g. optical proximity correction [OPC] design processes - G06F 30/398: Design verification or optimisation, e.g. using design rule check [DRC], layout versus schematics [LVS] or finite element methods [FEM] (optical proximity correction [OPC] design processes G03F1/36) - H10P 50/73: {using masks for insulating materials} - H10P 76/2041: {Photolithographic processes} - H10P 76/4088: {Processes for improving the resolution of the masks} - G03F: PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR; (phototypographic composing devices B41B; photosensitive materials or processes for photographic purposes G03C; electrophotography, sensitive layers or processes therefor G03G) - G06F: ELECTRIC DIGITAL DATA PROCESSING (computer systems based on specific computational models G06N) - H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10 ## Abstract According to one embodiment, a layout region of a mask pattern is divided into N (N is an integer of 2 or larger) units, a main pattern resolved by exposure light is arranged and sub patterns not resolved by the exposure light are arranged outside the main pattern such that distributions of attenuation amount of the exposure light in the divided layout regions are different. ## Claims ### Claim 1 A layout method of mask pattern, comprising: dividing a layout region of a mask pattern into N (N is an integer of 2 or larger) units; and arranging a main pattern resolved by exposure light and arranging a periodic structure of sub patterns not resolved by the exposure light outside the main pattern such that distributions of attenuation amount of the exposure light in the divided layout regions are different each other. ### Claim 2 (depends on 1) The layout method of mask pattern of claim 1, wherein the sub patterns are arranged on both sides of the main pattern, and the numbers of the sub patterns are different in the adjacent divided layout regions. ### Claim 3 (depends on 1) The layout method of mask pattern of claim 1, wherein when the layout region is in an XY plane, the layout region is divided into N units in an X direction, and the sub patterns are symmetrically arranged in the X direction. ### Claim 4 (depends on 3) The layout method of mask pattern of claim 3, wherein the layout region is divided into N units in an X direction such that the divided layout regions are symmetric in a Y direction, and the layout regions symmetric in the Y direction of the divided layout regions are equal in distribution of attenuation amount of the exposure light. ### Claim 5 (depends on 1) The layout method of mask pattern of claim 1, wherein dividing positions in the layout region are set based on the difference between an edge position of a resist pattern with the use of the mask pattern before division of the layout region and an edge position of a processed pattern with the use of the resist pattern. ### Claim 6 (depends on 5) The layout method of mask pattern of claim 5, wherein the difference is adjusted by adjusting the width and pitch of the sub patterns. ### Claim 7 (depends on 1) The layout method of mask pattern of claim 1, wherein dividing positions in the layout region are set based on the cross section shape of the resist pattern with the use of the mask pattern before division of the layout region. ### Claim 8 (depends on 5) The layout method of mask pattern of claim 5, wherein the cross section shape is adjusted by adjusting the width and pitch of the sub patterns. ### Claim 9 (depends on 1) The layout method of mask pattern of claim 1, wherein the sub patterns arranged in the layout regions with three sides at end portions of the divided layout regions include: first sub patterns that are arranged on two sides opposed to one another; and second sub patterns that are arranged on the one remaining side and are smaller in number than the first sub patterns. ### Claim 10 An exposure mask, wherein a layout region of a mask pattern is divided into N (N is an integer of 2 or larger) units; and a main pattern resolved by exposure light is arranged and a periodic structure of sub patterns not resolved by the exposure light is arranged outside the main pattern such that distributions of attenuation amount of the exposure light in the divided layout regions are different. ### Claim 11 (depends on 10) The exposure mask of claim 10, wherein the sub patterns are arranged on both sides of the main pattern, and the numbers of the sub patterns are different in the adjacent divided layout regions. ### Claim 12 (depends on 10) The exposure mask of claim 10, wherein when the layout region is in an XY plane, the layout region is divided into N units in an X direction, and the sub patterns are symmetrically arranged in the X direction. ### Claim 13 (depends on 12) The exposure mask of claim 12, wherein the layout region is divided into N units in an X direction such that the divided layout regions are symmetric in a Y direction, and the layout regions symmetric in the Y direction of the divided layout regions are equal in distribution of attenuation amount of the exposure light. ### Claim 14 (depends on 10) The exposure mask of claim 10, wherein the sub patterns arranged in the layout regions with three sides at end portions of the divided layout regions include: first sub patterns that are arranged on two sides opposed to one another; and second sub patterns that are arranged on the one remaining side and are smaller in number than the first sub patterns.