# US 10,120,130 B2 · Adiabatic planar waveguide coupler transformer > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 10,120,130 B2 - Document ID: US10120130B2 - Status: Granted - Kind: B2 - Application number: 15/987,742 - Filed: 2018-05-23 - Published: 2018-09-27 - Granted: 2018-11-06 - Earliest claimed: 2012-11-12 - Assignees: Demaray, LLC - Applicants: Demaray, LLC - Inventors: R. Ernest Demaray - Web page: https://patentgrep.com/patent/US10120130B2 ## CPC - G02B 6/122: Basic optical elements, e.g. light-guiding paths - C23C 14/044: {using masks to redistribute rather than totally prevent coating, e.g. producing thickness gradient} - C23C 14/083: {of refractory metals or yttrium} - G02B 6/0003: {the light guides being doped with fluorescent agents} - G02B 6/1228: {Tapered waveguides, e.g. integrated spot-size transformers (for coupling with fibres G02B6/305)} - G02B 6/132: by deposition of thin films - G02B 6/14: Mode converters - G02B 6/305: {and having an integrated mode-size expanding section, e.g. tapered waveguide} - G02B 6/4212: {the intermediate optical element being a coupling medium interposed therebetween, e.g. epoxy resin, refractive index matching material, index grease, matching liquid or gel} - G02B 19/0042: {for use with direct solar radiation} - G02B 2006/12147: {Coupler} - Y10T 74/18576: including screw and nut - G02B: OPTICAL ELEMENTS, SYSTEMS OR APPARATUS - C23C: COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL (making metal-coated products by extrusion B21C23/22; covering with metal by connecting pre-existing layers to articles, see the relevant places, e.g. B21D39/00, B23K; metallising of glass C03C; metallising mortars, concrete, artificial stone, ceramics or natural stone C04B41/00; enamelling of, or applying a vitreous layer to, metals C23D; treating metal surfaces or coating of metals by electrolysis or electrophoresis C25D; single-crystal film growth C30B; by metallising textiles D06M11/83; decorating textiles by locally metallising D06Q1/04) - Y10T: TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION ## Abstract A solar cell includes a waveguide core for receiving light, a first layer formed on the waveguide core, a second layer formed on the first layer, a third layer formed on the second layer, first metalization coupled to the first layer, and second metalization coupled to the third layer. The first layer comprises a first optical film which varies in an index of refraction in a lateral direction between a first input end where the light is received and a first output end where the light is emitted. In some embodiments, wherein one or more of the first, second, or third layers has a tapered lateral thickness. In some embodiments, the first, second, and third layers form a PIN device. In some embodiments, the waveguide core has a first index of refraction that is lower than respective indexes of refraction for the first, second, and third layers. ## Claims ### Claim 1 A solar cell comprising: a waveguide core for receiving light; a first layer formed on the waveguide core; a second layer formed on the first layer; a third layer formed on the second layer; first metalization coupled to the first layer; and second metalization coupled to the third layer; wherein the first layer comprises a first optical film which varies in an index of refraction in a lateral direction between a first input end where the light is received and a first output end where the light is emitted. ### Claim 2 (depends on 1) The solar cell of claim 1, wherein the second layer is an intrinsic layer that separates the first and third layers. ### Claim 3 (depends on 1) The solar cell of claim 1, wherein one or more of the first, second, or third layers has a tapered lateral thickness. ### Claim 4 (depends on 1) The solar cell of claim 1, wherein one or more of the first layer or the third layer is a conductive transparent layer. ### Claim 5 (depends on 1) The solar cell of claim 1, wherein the first, second, and third layers form a PIN device. ### Claim 6 (depends on 5) The solar cell of claim 5, wherein the PIN device includes a band absorber material selected from a group consisting of germanium, silicon, CdTe, CIGS, GaN, GaAs, and indium phosphide. ### Claim 7 (depends on 1) The solar cell of claim 1, wherein the waveguide core has a first index of refraction that is lower than respective indexes of refraction for the first, second, and third layers. ### Claim 8 A method comprising: receiving, by a solar cell, light, the solar cell comprising: a waveguide core for receiving the light; a first layer formed on the waveguide core; a second layer formed on the first layer; a third layer formed on the second layer; first metalization coupled to the first layer; and second metalization coupled to the third layer; wherein the first layer comprises a first optical film which varies in an index of refraction in a lateral direction between a first input end where the light is received and a first output end where the light is emitted; and generating a voltage. ### Claim 9 (depends on 8) The method of claim 8, wherein the second layer is an intrinsic layer that separates the first and third layers. ### Claim 10 (depends on 8) The method of claim 8, wherein one or more of the first, second, or third layers has a tapered lateral thickness. ### Claim 11 (depends on 8) The method of claim 8, wherein one or more of the first layer or the third layer is a conductive transparent layer. ### Claim 12 (depends on 8) The method of claim 8, wherein the first, second, and third layers form a PIN device. ### Claim 13 (depends on 12) The method of claim 12, wherein the PIN device includes a band absorber material selected from a group consisting of germanium, silicon, CdTe, CIGS, GaN, GaAs, and indium phosphide. ### Claim 14 (depends on 8) The method of claim 8, wherein the waveguide core has a first index of refraction that is lower than respective indexes of refraction for the first, second, and third layers. ### Claim 15 A solar cell comprising: a waveguide core for receiving light; a first PIN device formed on the waveguide core; a second PIN device formed on the waveguide core and coupled in series with the first PIN device; wherein the first PIN device comprises: a first layer formed on the waveguide core; a second layer formed on the first layer; a third layer formed on the second layer; first metalization coupled to the first layer; and second metalization coupled to the third layer; wherein the first layer comprises a first optical film which varies in an index of refraction in a lateral direction between a first input end where the light is received and a first output end where the light is emitted. ### Claim 16 (depends on 15) The solar cell of claim 15, further comprising a conductor electrically coupling the second metalization to a third metalization of the second PIN device. ### Claim 17 (depends on 15) The solar cell of claim 15, wherein the first PIN device and the second PIN device include a same band absorber material. ### Claim 18 (depends on 15) The solar cell of claim 15, wherein the first PIN device and the second PIN device include a different band absorber material. ### Claim 19 (depends on 15) The solar cell of claim 15, wherein the first PIN device includes a band absorber material selected from a group consisting of germanium, silicon, CdTe, CIGS, GaN, GaAs, and indium phosphide. ### Claim 20 (depends on 15) The solar cell of claim 15, wherein one or more of the first, second, or third layers has a tapered lateral thickness.