# US 10,119,334 B1 · Polycrystalline diamond compact including substantially single-phase polycrystalline diamond body and applications therefor > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 10,119,334 B1 - Document ID: US10119334B1 - Status: Granted - Kind: B1 - Application number: 14/987,440 - Filed: 2016-01-04 - Granted: 2018-11-06 - Earliest claimed: 2012-02-16 - Assignees: US Synthetic Corporation - Applicants: US Synthetic Corporation - Inventors: Kenneth E. Bertagnolli; C. Eugene McMurray - Web page: https://patentgrep.com/patent/US10119334B1 ## CPC - C23F 1/28: for etching iron group metals - E21B 10/12: with discs cutters - B01J 3/062: {characterised by the composition of the materials to be processed} - B24D 18/00: Manufacture of grinding tools {or other grinding devices}, e.g. wheels, not otherwise provided for - B24D 99/005: {Segments of abrasive wheels} - C23F 1/02: Local etching - B01J 3/06: Processes using ultra-high pressure, e.g. for the formation of diamonds; Apparatus therefor, e.g. moulds or dies (B01J3/04 takes precedence) - B01J 2203/062: Diamond - B01J 2203/0655: Diamond - B01J 2203/0685: Crystal sintering - C23F: NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE (working metal by laser beams B23K26/00; desurfacing by applying flames B23K7/00; working of metal by electro-erosion B23H; producing decorative effects by removing surface material, e.g. by engraving, by etching, B44C1/22; electrolytic etching or polishing C25F); INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25 - E21B: EARTH OR ROCK DRILLING; OBTAINING OIL, GAS, WATER, SOLUBLE OR MELTABLE MATERIALS OR A SLURRY OF MINERALS FROM WELLS - B01J: CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS - B24D: TOOLS FOR GRINDING, BUFFING OR SHARPENING (abrading-bodies specially designed for tumbling apparatus, e.g. abrading-balls B24B31/14; honing tools B24B33/08; lapping tools B24B37/11) ## Abstract Embodiments of the invention relate to polycrystalline diamond compacts (“PDC”) exhibiting enhanced diamond-to-diamond bonding. In an embodiment, PDC includes a sintered substantially single-phase polycrystalline diamond (“PCD”) body consisting essentially of bonded-together diamond grains exhibiting a morphology different than that of a PCD body formed by sintering diamond crystals. A substrate is bonded to the sintered substantially single-phase PCD body. Other embodiments are directed to methods of forming such PDCs, and various applications for such PDCs in rotary drill bits, bearing apparatuses, and wire-drawing dies. ## Claims ### Claim 1 A polycrystalline diamond compact, comprising: a sintered substantially single-phase polycrystalline diamond body consisting essentially of bonded-together diamond grains exhibiting a morphology different than that of a polycrystalline diamond body formed by sintering diamond crystals, wherein the sintered substantially single-phase polycrystalline diamond body includes substantially only one of carbon-12, carbon-13, or carbon-14; and a substrate bonded to the sintered substantially single-phase polycrystalline diamond body. ### Claim 2 (depends on 1) The polycrystalline diamond compact of claim 1 wherein the sintered substantially single-phase polycrystalline diamond body is brazed to the substrate. ### Claim 3 (depends on 1) The polycrystalline diamond compact of claim 1 wherein the sintered substantially single-phase polycrystalline diamond body includes an interfacial surface including a plurality of recesses therein, and wherein the plurality of recesses are at least partially filled with an infiltrant. ### Claim 4 (depends on 3) The polycrystalline diamond compact of claim 3 wherein the infiltrant comprises a metallic infiltrant infiltrated from the substrate. ### Claim 5 (depends on 1) The polycrystalline diamond compact of claim 1 wherein the sintered substantially single-phase polycrystalline diamond body is integrally formed with the substrate or a preformed polycrystalline diamond body. ### Claim 6 (depends on 1) The polycrystalline diamond compact of claim 1 wherein the sintered substantially single-phase polycrystalline diamond body includes a porous interfacial surface positioned adjacent to the substrate, the porous interfacial surface infiltrated with a metallic infiltrant from the substrate. ### Claim 7 (depends on 1) The polycrystalline diamond compact of claim 1, further comprising at least two polycrystalline diamond layers disposed between the sintered substantially single-phase polycrystalline diamond body and the substrate, wherein the at least two polycrystalline diamond layers includes metal-solvent catalyst therein. ### Claim 8 (depends on 7) The polycrystalline diamond compact of claim 7 wherein the at least two polycrystalline diamond layers includes: a first polycrystalline diamond layer adjacent to the substrate including fine-sized polycrystalline diamond grains exhibiting a fine-sized average grain size; a second polycrystalline diamond layer adjacent to the first polycrystalline diamond layer including medium-sized polycrystalline diamond grains exhibiting a medium-sized average grain size greater than the fine-sized average grain size; a third polycrystalline diamond layer between the second polycrystalline diamond layer and the sintered substantially single-phase polycrystalline diamond body including coarse-sized polycrystalline diamond grains exhibiting a coarse-sized average grain size greater than the medium-sized average grain size; and wherein the coarse-sized average grain size is at least about 2 times that of the medium-sized average grain size, and the coarse-sized average grain size is at least about 5 times that of the fine-sized average grain size. ### Claim 9 (depends on 8) The polycrystalline diamond compact of claim 8 wherein the first polycrystalline diamond layer includes a first amount of the metal-solvent catalyst, the second polycrystalline diamond layer includes a second amount of the metal-solvent catalyst that is less than the first amount, and the third polycrystalline diamond layer includes a third amount of the metal-solvent catalyst that is less than the second amount. ### Claim 10 (depends on 7) The polycrystalline diamond compact of claim 7 wherein at least one of the at least two polycrystalline diamond layers includes a residual amount of sacrificial materials therein. ### Claim 11 (depends on 1) The polycrystalline diamond compact of claim 1 wherein the substantially single-phase polycrystalline diamond body includes randomly oriented granular grains. ### Claim 12 (depends on 1) The polycrystalline diamond compact of claim 1 wherein the substantially single-phase polycrystalline diamond body exhibits a Gratio of at least about 5.0×106. ### Claim 13 (depends on 1) The polycrystalline diamond compact of claim 1 wherein the substantially single-phase polycrystalline diamond body exhibits a Gratio of at least about 20.0×106. ### Claim 14 A polycrystalline diamond compact, comprising: a sintered substantially single-phase polycrystalline diamond body consisting essentially of bonded-together diamond grains exhibiting a morphology different than that of a polycrystalline diamond body formed by sintering diamond crystals, the sintered substantially single-phase polycrystalline diamond body including working surface and a porous interfacial surface positioned opposite the working surface; a substrate; and at least one polycrystalline diamond layer positioned between the sintered substantially single-phase polycrystalline diamond body and the substrate, the at least one polycrystalline diamond layer bonded to the porous interfacial surface of the substantially single-phase polycrystalline diamond body and the substrate. ### Claim 15 (depends on 14) The polycrystalline diamond compact of claim 14 wherein the sintered substantially single-phase polycrystalline diamond body includes an interfacial surface including a plurality of recesses therein, the plurality of recesses substantially completely filled with an infiltrant. ### Claim 16 (depends on 14) The polycrystalline diamond compact of claim 14 wherein the at least one polycrystalline diamond layer includes: a first polycrystalline diamond layer adjacent to the substrate including fine-sized polycrystalline diamond grains exhibiting a fine-sized average grain size; a second polycrystalline diamond layer adjacent to the first polycrystalline diamond layer including medium-sized polycrystalline diamond grains exhibiting a medium-sized average grain size greater than the fine-sized average grain size; a third polycrystalline diamond layer between the second polycrystalline diamond layer and the sintered substantially single-phase polycrystalline diamond body including coarse-sized polycrystalline diamond grains exhibiting a coarse-sized average grain size greater than the medium-sized average grain size; and wherein the coarse-sized average grain size is at least about 2 times that of the medium-sized average grain size, and the coarse-sized average grain size is at least about 5 times that of the fine-sized average grain size. ### Claim 17 A rotary drill bit, comprising: a bit body including a leading end structure configured to facilitate drilling a subterranean formation; and a plurality of polycrystalline diamond cutting elements mounted to the blades, at least one of the plurality of polycrystalline diamond cutting elements including: a sintered substantially single-phase polycrystalline diamond body consisting essentially of bonded-together diamond grains exhibiting a morphology different than that of a polycrystalline diamond body formed by sintering diamond crystals and the substantially single-phase polycrystalline diamond body includes substantially only one of carbon-12, carbon-13, or carbon-14; and a substrate bonded to the sintered substantially single-phase polycrystalline diamond body. ### Claim 18 (depends on 17) The rotary drill bit of claim 17 wherein the sintered substantially single-phase polycrystalline diamond body is brazed to the substrate. ### Claim 19 (depends on 17) The rotary drill bit of claim 17 wherein the sintered substantially single-phase polycrystalline diamond body includes an interfacial surface including a plurality of recesses therein, and wherein the plurality of recesses are at least partially filled with an infiltrant. ### Claim 20 (depends on 14) The polycrystalline diamond compact of claim 14 wherein the substantially single-phase polycrystalline diamond body includes substantially only one of carbon-12, carbon-13, or carbon-14.