# US 10,119,199 B2 · Method for producing SiC single crystal

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- Number: US 10,119,199 B2
- Document ID: US10119199B2
- Status: Granted
- Kind: B2
- Application number: 15/558,683
- Filed: 2016-03-17
- Published: 2018-04-26
- Granted: 2018-11-06
- Earliest claimed: 2015-03-18
- Assignees: Toyota Jidosha Kabushiki Kaisha
- Applicants: Toyota Jidosha Kabushiki Kaisha
- Inventors: Kazuaki Seki; Kazuhito Kamei; Kazuhiko Kusunoki; Katsunori Danno; Hironori Daikoku; Masayoshi Doi
- Web page: https://patentgrep.com/patent/US10119199B2

## CPC

- C30B 19/10: Controlling or regulating (controlling or regulating in general G05)
- C30B 9/06: using as solvent a component of the crystal composition
- C30B 19/04: the solvent being a component of the crystal composition
- C30B 19/08: Heating of the reaction chamber or the substrate
- C30B 23/025: {characterised by the substrate}
- C30B 25/20: the substrate being of the same materials as the epitaxial layer
- C30B 29/36: Carbides
- C30B 29/68: Crystals with laminate structure, e.g. "superlattices"
- C30B: SINGLE-CRYSTAL GROWTH (by using ultra-high pressure, e.g. for the formation of diamonds, B01J3/06); UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL (zone-refining of metals or alloys C22B); PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE (casting of metals, casting of other substances by the same processes or devices B22D; working of plastics B29; modifying the physical structure of metals or alloys C21D, C22F); SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE (for producing semiconductor devices or parts thereof H10); APPARATUS THEREFOR

## Abstract

A production method according an embodiment of the present invention is to produce a SiC single crystal by a solution growth technique, and includes a formation step and a growth step. In the formation step, material of Si—C solution contained in a crucible is melted, and a Si—C solution is formed. In the growth step, a SiC seed crystal attached to a bottom end of a seed shaft is brought into contact with the Si—C solution, and a SiC single crystal is grown on a crystal growth surface of the SiC seed crystal. In the growth step, while a temperature of the Si—C solution is being raised, the SiC single crystal is grown. The SiC single crystal production method according to the embodiment facilitates production of a SiC single crystal of a desired polytype.

## Claims

### Claim 1

A method for producing a SIC single crystal by a solution growth technique, the method comprising:
a formation step of forming a Si—C solution by melting material for the Si—C solution contained in a crucible; and
a growth step of bringing a SiC seed crystal attached to a bottom end of a seed shaft into contact with the Si—C solution and growing a SiC single crystal on a crystal growth surface of the SiC seed crystal, wherein
in the growth step, while a temperature of the Si—C solution is being raised, the SiC single crystal is grown.

### Claim 2 (depends on 1)

The method for producing a SiC single crystal according to claim 1, wherein
in the growth step, a crystal growth temperature at the end of growth of the SiC single crystal is higher than a crystal growth temperature at the start of growth of the SiC single crystal.

### Claim 3 (depends on 1)

The method for producing a SiC single crystal according to claim 1, wherein
in the growth step, a meniscus is formed between a liquid surface of the Si—C solution and the crystal growth surface of the SIC seed crystal.

### Claim 4 (depends on 3)

The method for producing a SiC single crystal according to claim 3, wherein
the meniscus has a height of 3 mm or less.

### Claim 5

A method for producing a SIC single crystal, the method comprising:
a formation step of forming a Si—C solution by melting material for the Si—C solution contained in a crucible,
a first growth step of bringing a first SiC seed crystal attached to a bottom end of a seed shaft into contact with the Si—C solution and growing a first SIC single crystal on a crystal growth surface of the first SiC seed crystal, wherein
in the first growth step, while a temperature of the Si—C solution is being raised, the first SiC single crystal is grown,
a preparation step of preparing the first SIC single crystal; and
a second growth step of using the first SiC single crystal as a second seed crystal and growing a second SiC single crystal on a crystal growth surface of the second SiC seed crystal by a sublimation-recrystallization technique or a high-temperature CVD technique.

### Claim 6 (depends on 2)

The method for producing a SiC single crystal according to claim 2, wherein
in the growth step, a meniscus is formed between a liquid surface of the Si—C solution and the crystal growth surface of the SiC seed crystal.

### Claim 7 (depends on 6)

The method for producing a SiC single crystal according to claim 6, wherein
the meniscus has a height of 3 mm or less.

### Claim 8 (depends on 5)

The method for producing a SiC single crystal according to claim 5, wherein
in the first growth step, a crystal growth temperature at the end of growth of the first SiC single crystal is higher than a crystal growth temperature at the start of growth of the first SiC single crystal.

### Claim 9 (depends on 5)

The method for producing a SiC single crystal according to claim 5, wherein
in the first growth step, a meniscus is formed between a liquid surface of the Si—C solution and the crystal growth surface of the first SIC seed crystal.

### Claim 10 (depends on 8)

The method for producing a SiC single crystal according to claim 8, wherein
in the first growth step, a meniscus is formed between a liquid surface of the Si—C solution and the crystal growth surface of the first SIC seed crystal.

### Claim 11 (depends on 9)

The method for producing a SiC single crystal according to claim 9, wherein
the meniscus has a height of 3 mm or less.

### Claim 12 (depends on 10)

The method for producing a SiC single crystal according to claim 10, wherein
the meniscus has a height of 3 mm or less.