# US 10,118,940 B2 · Alkoxide compound and raw material for forming thin film > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 10,118,940 B2 - Document ID: US10118940B2 - Status: Granted - Kind: B2 - Application number: 14/115,495 - Filed: 2012-05-15 - Published: 2014-06-26 - Granted: 2018-11-06 - Earliest claimed: 2011-08-02 - Assignees: Adeka Corporation - Applicants: Senji Wada; Akio Saito; Tomoharu Yoshino - Inventors: Senji Wada; Akio Saito; Tomoharu Yoshino - Web page: https://patentgrep.com/patent/US10118940B2 ## CPC - C07F 15/045: {without a metal-carbon linkage} - C07C 215/08: with only one hydroxy group and one amino group bound to the carbon skeleton - C23C 16/06: characterised by the deposition of metallic material - C23C 16/406: {of iron group metals} - C23C 16/45553: {characterized by the use of precursors specially adapted for ALD} - C07F: ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM (metal-containing porphyrins C07D487/22) - C07C: ACYCLIC OR CARBOCYCLIC COMPOUNDS - C23C: COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL (making metal-coated products by extrusion B21C23/22; covering with metal by connecting pre-existing layers to articles, see the relevant places, e.g. B21D39/00, B23K; metallising of glass C03C; metallising mortars, concrete, artificial stone, ceramics or natural stone C04B41/00; enamelling of, or applying a vitreous layer to, metals C23D; treating metal surfaces or coating of metals by electrolysis or electrophoresis C25D; single-crystal film growth C30B; by metallising textiles D06M11/83; decorating textiles by locally metallising D06Q1/04) ## Abstract An alkoxide compound represented by the following formula (I), and a raw material for thin film formation containing the alkoxide compound. In the formula, R1 represents a linear or branched alkyl group having 2 to 4 carbon atoms, and R2 and R3 each represent a linear or branched alkyl group having 1 to 4 carbon atoms. In the formula (I), R1 is preferably an ethyl group. It is also preferred that one or both of R2 and R3 be an ethyl group. The raw material for thin film formation including an alkoxide compound represented by general formula (I) is preferably used as a raw material for chemical vapor deposition. ## Claims ### Claim 1 A raw material for film formation comprising an alkoxide compound represented by one of the following compounds: ### Claim 2 (depends on 1) The raw material for thin film formation according to claim 1 to be used as a raw material for chemical vapor deposition. ### Claim 3 (depends on 2) The raw material for thin film formation according to claim 2, the raw material comprising a precursor comprising the alkoxide compound and optionally a precursor excluding the alkoxide compound, wherein the precursor excluding the alkoxide compound is in a proportion of from 0 to 10 mol per mol of the alkoxide compound, and the raw material is delivered and fed by a vapor delivery method or a liquid delivery method in thin film production. ### Claim 4 (depends on 2) The raw material for thin film formation according to claim 2, the raw material comprising an organic solvent and a precursor comprising the alkoxide compound and optionally a precursor excluding the alkoxide compound, wherein the content of the precursor comprising the alkoxide compound is 0.01 to 2.0 mol/liter, the precursor excluding the alkoxide compound is in a proportion of from 0 to 10 mol per mol of the alkoxide compound, and the raw material is delivered and fed by a liquid delivery method in thin film production. ### Claim 5 (depends on 2) The raw material for thin film formation according to claim 2, the raw material comprising a precursor comprising the alkoxide compound and a precursor excluding the alkoxide compound, wherein the precursor excluding the alkoxide compound is in a proportion of from 0 to 10 mol per mol of the alkoxide compound, and the raw material is delivered and fed by a vapor delivery method or a liquid delivery method in thin film production. ### Claim 6 (depends on 2) The raw material for thin film formation according to claim 2, the raw material comprising a precursor comprising the alkoxide compound, and the raw material is delivered and fed by a vapor delivery method or a liquid delivery method in thin film production. ### Claim 7 (depends on 1) The raw material for thin film formation according to claim 1, the raw material comprising an organic solvent and a precursor comprising the alkoxide compound and a precursor excluding the alkoxide compound, wherein the content of the precursor comprising the alkoxide compound is 0.01 to 2.0 mol/liter, the precursor excluding the alkoxide compound is in a proportion of from 0 to 10 mol per mol of the alkoxide compound, and the raw material is delivered and fed by a liquid delivery method in thin film production. ### Claim 8 (depends on 1) The raw material for film formation according to claim 1, wherein the alkoxide compound is in a liquid state under room temperature and room pressure. ### Claim 9 (depends on 1) The raw material for film formation according to claim 1, further comprising at least one solvent selected from the group consisting of ethyl acetate, butyl acetate, methoxyethyl acetate, ethylene glycol monomethyl ether, ethylene glycol monoethyl ether, ethylene glycol monobutyl ether, diethyleneglycol, tetrahydrofuran, tetrahydropyran, ethylene glycol dimethyl ether, diethylene glycol dimethyl ether, triethylene glycol dimethyl ether, dibutyl ether, dioxane, methyl butyl ketone, methyl isobutyl ketone, ethyl butyl ketone, dipropyl ketone, diisobutyl ketone, methyl amyl ketone, cyclohexanone, methylcyclohexanone, hexane, cyclohexane, methylcyclohexane, dimethylcyclohexane, ethylcyclohexane, heptane, octane, toluene, and xylene 1-cyanopropane, 1-cyanobutane, 1-cyanohexane, cyanocyclohexane, cycanobenzene, 1,3-dicyanopropane, 1,4-dicyanobutane, 1,6-dicyanohexane, 1,4-dicyanocyclohexane, 1,4-dicyanobenzene, pyridine and lutidine. ### Claim 10 (depends on 9) The raw material for film formation according to claim 9, wherein a total amount of the alkoxide compound and other precursor(s) in the organic solvent is 0.01 to 2.0 mol/liter. ### Claim 11 (depends on 9) The raw material for film formation according to claim 9, wherein a total amount of the alkoxide compound and other precursor(s) in the organic solvent is 0.05 to 1.0 mol/liter. ### Claim 12 (depends on 1) The raw material for film formation according to claim 1, wherein the alkoxide compound is the Compound No. 4 having a 50% mass loss temperature of 195° C. and a boiling point of 102° C. at 120 Pa: ### Claim 13 A raw material for film formation comprising an alkoxide compound represented by the following: having a 50% mass loss temperature of 195° C. and a boiling point of 102° C. at 120 Pa.