# US 10,118,828 B2 · Tritertbutyl aluminum reactants for vapor deposition

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- Number: US 10,118,828 B2
- Document ID: US10118828B2
- Status: Granted
- Kind: B2
- Application number: 15/239,389
- Filed: 2016-08-17
- Published: 2017-04-06
- Granted: 2018-11-06
- Earliest claimed: 2015-10-02
- Assignees: ASM IP Holding B.V.
- Applicants: Asm IP Holding B.V.
- Inventors: Eric J. Shero; Mohith E. Verghese
- Web page: https://patentgrep.com/patent/US10118828B2

## CPC

- C01B 32/921: Titanium carbide
- C23C 16/32: Carbides
- C23C 16/45525: {Atomic layer deposition [ALD]}
- C01B: NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; {METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C}
- C23C: COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL (making metal-coated products by extrusion B21C23/22; covering with metal by connecting pre-existing layers to articles, see the relevant places, e.g. B21D39/00, B23K; metallising of glass C03C; metallising mortars, concrete, artificial stone, ceramics or natural stone C04B41/00; enamelling of, or applying a vitreous layer to, metals C23D; treating metal surfaces or coating of metals by electrolysis or electrophoresis C25D; single-crystal film growth C30B; by metallising textiles D06M11/83; decorating textiles by locally metallising D06Q1/04)

## Abstract

Aluminum (Al) hydrocarbon precursor compositions are provided that can be used for vapor deposition of transition metal carbide thin films, for example aluminum-doped transition metal carbide thin films such as Al-doped titanium carbide thin films. In some embodiments, the precursor compositions comprise one or more isomers of tritertbutyl aluminum (TTBA). In some embodiments the precursor compositions comprise at least 50% of Isomer 1 of TTBA, at least 50% of Isomer 2 of TTBA, or at least 20% of a combination of Isomer 1 and Isomer 2, where Isomer 1 has the formula Al(tert-Bu)2(iso-Bu) and Isomer 2 has the formula Al(tert-Bu)(iso-Bu)2. A container containing a precursor composition comprising at least 50% of Isomer 1 or Isomer 2 or at least 20% of a combination of Isomer 1 and 2 of TTBA can be attached to a vapor deposition reactor and used to deposit transition metal carbide thin films such as Al-doped titanium carbide thin films by atomic layer deposition or chemical vapor deposition.

## Claims

### Claim 1

A vapor deposition precursor composition comprising at least 50% Isomer 1, at least 50% Isomer 2, or greater than 20% of a combination of Isomer 1 and Isomer 2 of Al(tert-Bu)3 (TTBA), wherein Isomer 1 has the formula Al(tert-Bu)2(iso-Bu) and Isomer 2 has the formula Al(tert-Bu)(iso-Bu)2.

### Claim 2 (depends on 1)

The composition of claim 1 comprising at least 70% Isomer 1.

### Claim 3 (depends on 1)

The composition of claim 1 comprising at least 80% Isomer 1.

### Claim 4 (depends on 1)

The composition of claim 1 comprising at least 70% Isomer 2.

### Claim 5 (depends on 1)

The composition of claim 1 comprising greater than 50% of a combination of Isomer 1 and Isomer 2.

### Claim 6 (depends on 1)

The composition of claim 1 comprising greater than 80% of a combination of Isomer 1 and Isomer 2.

### Claim 7 (depends on 1)

The composition of claim 1 comprising at least 80% Isomer 2.

### Claim 8 (depends on 1)

The composition of claim 1, wherein the composition further comprises Al(tert-Bu)3.

### Claim 9 (depends on 1)

The composition of claim 1, wherein the composition does not comprise Isomer 3 wherein Isomer 3 has the formula Al(iso-Bu)3.

### Claim 10 (depends on 1)

The composition of claim 1, additionally comprising Isomer 3 of Al(tert-Bu)3, wherein Isomer 3 has the formula Al(iso-Bu)3.

### Claim 11 (depends on 10)

The composition of claim 10, wherein the composition comprises at most 5% Isomer 3.

### Claim 12

A container configured to be attached to a deposition reactor, the container comprising a composition comprising at least 50% Isomer 1, at least 50% Isomer 2 or at least 20% of a combination of Isomer 1 and Isomer 2 of Al(tert-Bu)3, wherein Isomer 1 has the formula Al(tert-Bu)2(iso-Bu) and Isomer 2 has the formula Al(tert-Bu)(iso-Bu)2.

### Claim 13 (depends on 12)

The container of claim 12, wherein the composition comprises at least 70% Isomer 1.

### Claim 14 (depends on 12)

The container of claim 12, wherein the composition comprises at least 90% Isomer 1.

### Claim 15 (depends on 12)

The container of claim 12, wherein the composition comprises at least 70% Isomer 2.

### Claim 16 (depends on 12)

The container of claim 12, wherein the composition comprises at least 90% Isomer 2.

### Claim 17 (depends on 12)

The container of claim 12, wherein the composition comprises at least 50% of a combination of Isomer 1 and Isomer 2.

### Claim 18 (depends on 12)

The container of claim 12, wherein the composition comprises at least 80% of a combination of Isomer 1 and Isomer 2.

### Claim 19 (depends on 12)

The container of claim 12, wherein the composition comprises only a combination of Isomer 1 and Isomer 2.

### Claim 20 (depends on 12)

The container of claim 12, wherein the composition additionally comprises Isomer 3 of Al(tert-Bu)3, wherein Isomer 3 has the formula Al(iso-Bu)3.

### Claim 21 (depends on 20)

The container of claim 20, wherein the composition comprises at most 5% Isomer 3.