# US 10,118,272 B2 · Method for evaluating polishing pad and method for polishing wafer

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- Number: US 10,118,272 B2
- Document ID: US10118272B2
- Status: Granted
- Kind: B2
- Application number: 14/915,756
- Filed: 2014-08-22
- Published: 2016-07-07
- Granted: 2018-11-06
- Earliest claimed: 2013-09-19
- Assignees: Shin-Etsu Handotai Co., Ltd.
- Applicants: Shin-Etsu Handotai Co., Ltd.
- Inventors: Yuki Tanaka; Kazuya Sato; Syuichi Kobayashi
- Web page: https://patentgrep.com/patent/US10118272B2

## CPC

- B24B 37/005: Control means for lapping machines or devices
- B24B 37/20: Lapping pads for working plane surfaces
- B24B 49/12: involving optical means
- B24B: MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING (grinding of gear teeth B23F, of screw-threads B23G1/36; by electro-erosion B23H; abrasive or related blasting B24C; tools for grinding, buffing or sharpening B24D; polishing compositions C09G1/00; abrasives C09K3/14; electrolytic etching or polishing C25F3/00; grinding arrangements for use on assembled railway tracks E01B31/17); DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS

## Abstract

The present invention provides a method for evaluating a polishing pad by which a life of a polishing pad to polish a wafer is evaluated, the method being characterized in that a quantity of polishing residues deposited on the polishing pad is measured, and the life of the polishing pad is evaluated based on a measurement value provided by the measurement. Consequently, it is possible to provide the method for evaluating a polishing pad and the method for polishing a wafer that enable immediately evaluating the life of the polishing pad and also enable suppressing a reduction in productivity and a yield ratio at the time of polishing the wafer.

## Claims

### Claim 1

A method for evaluating a polishing pad by which a life of a polishing pad to polish a wafer is evaluated,
wherein a quantity of polishing residues from at least one wafer deposited on the polishing pad is measured, and the life of the polishing pad is evaluated based on a measurement value provided by the measurement.

### Claim 2 (depends on 1)

The method for evaluating a polishing pad according to claim 1,
wherein the quantity of polishing residue is measured by detecting a signal including an Si-Kα line from a fluorescent X-ray spectrum provided by fluorescent X-ray spectroscopy.

### Claim 3 (depends on 2)

The method for evaluating a polishing pad according to claim 2,
wherein a linear approximate equation is found from the measurement value of the quantity of polishing residues with respect to a use time of the polishing pad, and the use time with which a value of the linear approximate equation reaches a preset threshold value is determined as the life of the polishing pad.

### Claim 4 (depends on 1)

The method for evaluating a polishing pad according to claim 1,
wherein a linear approximate equation is found from the measurement value of the quantity of polishing residues with respect to a use time of the polishing pad, and the use time with which a value of the linear approximate equation reaches a preset threshold value is determined as the life of the polishing pad.

### Claim 5

A method for polishing a wafer by bringing a plurality of wafers into sliding contact with a polishing pad,
wherein a quantity of polishing residues from at least one wafer deposited on the polishing pad is measured before polishing, a life of the polishing pad is predicted based on a measurement value provided by the measurement, and the polishing pad is replaced at a time point that a use time of the polishing pad reaches the predicted life.

### Claim 6 (depends on 5)

The method for polishing a wafer according to claim 5,
wherein the quantity of polishing residues is measured by detecting a signal including an Si-Kα line from a fluorescent X-ray spectrum provided by fluorescent X-ray spectroscopy.

### Claim 7 (depends on 6)

The method for polishing a wafer according to claim 6,
wherein a linear approximate equation is found from the measurement value of the quantity of polishing residues with respect to a use time of the polishing pad, and the use time with which a value of the linear approximate equation reaches a preset threshold value is determined as the life of the polishing pad.

### Claim 8 (depends on 5)

The method for polishing a wafer according to claim 5,
wherein a linear approximate equation is found from the measurement value of the quantity of polishing residues with respect to a use time of the polishing pad, and the use time with which a value of the linear approximate equation reaches a preset threshold value is determined as the life of the polishing pad.