# US 10,118,240 B2 · Method for forming solder deposits

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- Number: US 10,118,240 B2
- Document ID: US10118240B2
- Status: Granted
- Kind: B2
- Application number: 15/658,084
- Filed: 2017-07-24
- Published: 2017-11-09
- Granted: 2018-11-06
- Earliest claimed: 2010-04-16
- Assignees: Pac Tech—Packaging Technologies GmbH
- Applicants: Pac Tech—Packaging Technologies GmbH
- Inventors: Ghassem Azdasht
- Web page: https://patentgrep.com/patent/US10118240B2

## CPC

- B23K 1/20: Preliminary treatment of work or areas to be soldered, e.g. in respect of a galvanic coating
- B23K 1/0056: {soldering by means of beams, e.g. lasers, electron beams [EB]}
- B23K 3/06: Solder feeding devices; Solder melting pans
- B23K 3/0607: {Solder feeding devices}
- H10P 72/74: {using temporarily an auxiliary support}
- H10W 72/0112: {Apparatus for manufacturing bump connectors}
- H10W 72/01204: {using temporary auxiliary members, e.g. using sacrificial coatings or handle substrates}
- H10W 72/01215: {forming coatings}
- H10W 72/07131: {Means for applying material, e.g. for deposition or forming coatings}
- H10W 72/20: Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
- H10W 72/251: {Materials}
- H10W 72/29: Bond pads specially adapted therefor
- H10W 72/90: Bond pads, in general
- B23K: SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10

## Abstract

A method for forming solder deposits on elevated contact metallizations of terminal faces of a substrate formed in particular as a semiconductor component includes bringing wetting surfaces of the contact metallizations into physical contact with a solder material layer. The solder material is arranged on a solder material carrier. At least for the duration of the physical contact, a heating of the substrate and a tempering of the solder material layer takes place. Subsequently a separation of the physical contact between the contact metallizations wetted with solder material and the solder material layer takes place.

## Claims

### Claim 1

A method for forming metallic solder deposits on fine pitch elevated contact metallizations formed on a substrate of a semiconductor component, comprising the steps of:
bringing wetting surfaces of the contact metallizations into physical contact with a solder material layer,
simultaneously heating the substrate and cooling the metallic solder material layer during the physical contact, and
subsequently separating the contact metallizations from the metallic solder material layer, wherein the contact metallizations are wetted with solder material.

### Claim 2 (depends on 1)

The method according to claim 1, further comprising the step of disposing the contact metallizations in a protective medium during the physical contact with the solder material layer.

### Claim 3 (depends on 2)

The method according to claim 2, wherein the protective medium comprises a flux layer applied onto the solder material layer.

### Claim 4 (depends on 1)

The method according to claim 1, further comprising the step of moving the solder material layer into and out of contact with the contact metallizations by an approach and a retreat motion of the substrate, respectively.

### Claim 5 (depends on 1)

The method according to claim 1, wherein the step of heating the substrate comprises applying laser energy to the substrate.

### Claim 6 (depends on 1)

The method according to claim 1, further comprising the step of mounting the solder material layer to a carrier platform comprising a cooling device.

### Claim 7 (depends on 1)

The method according to claim 1, further comprising the step of forming the solder material layer as a layer of molded bodies of solder material on a solder material carrier.

### Claim 8 (depends on 7)

The method according to claim 7, wherein the solder material molded bodies have a diameter which is smaller than the distance between each of the contact metallizations and a neighboring one of the contact metallizations of the substrate.

### Claim 9 (depends on 1)

The method of claim 1, wherein the semiconductor component is a flip chip.