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US 10,113,030 B2Granted
Resist material and pattern forming method using same
AssigneeToshiba Memory Corporation
InventorsKei Kobayashi, Seiji Morita
Life of this patent
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Abstract
In one embodiment, a resist material to be used in an imprint process includes a diluent monomer having a hydroxyl group and at least one functional group selected from a vinyl ether group, an epoxy group and an oxetanyl group. The material further includes a dendrimer having at least two reactive groups for photo-cationic polymerization. The material further includes a photo-acid generator as a polymerization initiator.
Claims5
A pattern forming method comprising:
- providing, on a substrate, a resist material which comprises a diluent monomer having a hydroxyl group and at least one functional group selected from a vinyl ether group, an epoxy group and an oxetanyl group, a dendrimer with a globular structure having at least two reactive groups for photo-cationic polymerization, and a photo-acid generator as a polymerization initiator;
- imprinting a template having concave-convex shape patterns against the resist material;
- curing the resist material;
- and
- releasing the template from the cured resist material.
2 more elements
Dependencies are inferred from the claim text.