Optical semiconductor element and laser device assembly
AssigneeSony Corporation
InventorsRintaro Koda, Masaru Kuramoto, Shunsuke Kono, Hideki Watanabe, Hiroshi Yoshida
Life of this patent
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Abstract
Provided is an optical semiconductor element including: a stacked structure body 20 formed of a first compound semiconductor layer 21, a third compound semiconductor layer (active layer) 23, and a second compound semiconductor layer 22. A fundamental mode waveguide region 40 with a waveguide width W1, a free propagation region 50 with a width larger than W1, and a light emitting region 60 having a tapered shape (flared shape) with a width increasing toward a light emitting end surface 25 are arranged in sequence.
Claims17
An optical semiconductor element, comprising:
- a stacked structure body that comprises a first compound semiconductor layer, a second compound semiconductor layer, and a third compound semiconductor layer;
- a fundamental mode waveguide region with a waveguide width W1;
- a free propagation region with a width larger than W1;
- and
- a light emitting region that has a tapered shape with a width that increases toward a light emitting end surface of the optical semiconductor element, wherein the fundamental mode waveguide region, the free propagation region, and the light emitting region are arranged in sequence, and
- wherein W2>2L2·tan (θ1)+W1 is satisfied,
- where L2 is a length of the free propagation region, θ1 is a diffraction angle of light that proceeds from the fundamental mode waveguide region toward the free propagation region, and W2 is a width of a boundary portion, of the optical semiconductor element, between the light emitting region and the free propagation region.
A laser device assembly, comprising:
- a laser light source configured to emit laser light;
- and
- a semiconductor optical amplifier configured to amplify the laser light emitted from the laser light source, wherein the semiconductor optical amplifier comprises:
- a stacked structure body that comprises a first compound semiconductor layer, a second compound semiconductor layer, and a third compound semiconductor layer;
- a fundamental mode waveguide region with a waveguide width W1;
- a free propagation region with a width larger than W1;
- and
- a light emitting region that has a tapered shape with a width that increases toward a light emitting end surface of the semiconductor optical amplifier, wherein the fundamental mode waveguide region, the free propagation region, and the light emitting region are arranged in sequence,
- wherein W2>2L2·tan (θ1)+W1 is satisfied,
- where L2 is a length of the free propagation region, θ1 is a diffraction angle of light that proceeds from the fundamental mode waveguide region toward the free propagation region, and W2 is a width of a boundary portion, of the optical semiconductor element, between the light emitting region and the free propagation region, and
- wherein an axis of the light emitting region and the light emitting end surface of the semiconductor optical amplifier cross each other at an acute angle.
Dependencies are inferred from the claim text.