Semiconductor device

A semiconductor device comprising:

• a semiconductor element;
• a first plate-like part that is made of an electric conductor, is electrically connected to a top-face-side electrode of the semiconductor element, and includes a first joint part that projects from a side face of the first plate-like part;
• and
• a second plate-like part that is made of an electric conductor, and includes a second joint part that projects from a side face of the second plate-like part,
• wherein
• a bottom face of the first joint part and a top face of the second joint part face one another, and are electrically connected via an electro-conductive bonding material,
• a bonding-material-thickness ensuring part is provided in a zone where the bottom face of the first joint part and the top face of the second joint part face one another to ensure a thickness of the electro-conductive bonding material between an upper portion of a front end of the second joint part and the bottom face of the first joint part,
• the bonding-material-thickness ensuring part is a groove formed from the bottom face of the first joint part,
• the upper portion of the front end of the second joint part is fixed via the bonding material at a position overlapping with the groove in plan view,
• the groove is formed to have a ring shape,
• a top face of the second joint part is a projection, and
• an upper portion of a front end of the projection and an upper portion of a rear end of the projection are fixed via the bonding material at positions overlapping with the groove in plan view.

A semiconductor device comprising:

• a first semiconductor element;
• a second semiconductor element;
• a first plate-like part that is made of an electric conductor, is electrically connected to a top-face-side electrode of the first semiconductor element, and includes a first joint part that projects from a side face of the first plate-like part;
• a second plate-like part that is made of an electric conductor, and includes a second joint part that projects from a side face of the second plate-like part;
• a third plate-like part that is made of an electric conductor, is electrically connected to a top-face-side electrode of the second semiconductor element, and includes a third joint part that projects from a side face of the third plate-like part;
• and
• a fourth plate-like part that is made of an electric conductor, and includes a fourth joint part that projects from a side face of the fourth plate-like part,
• wherein
• a bottom face of the first joint part and a top face of the second joint part face one another, and are electrically connected via an electro-conductive bonding material,
• a bonding-material-thickness ensuring part is provided in a zone where the bottom face of the first joint part and the top face of the second joint part face one another to ensure a thickness of the electro-conductive bonding material between an upper portion of a front end of the second joint part and the bottom face of the first joint part, and
• the second plate-like part is not electrically connected to a bottom-face-side electrode of the second semiconductor element.