Rectenna circuit elements, circuits, and techniques for enhanced efficiency wireless power transmission or ambient RF energy harvesting

A circuit configured for receiving RF energy distributed in multiple RF frequency bands, comprising:

• a multi-band multi-channel (MBMC) matching network that includes:
• and
• a plurality of T-shaped transmission line matching structures, each T-shaped transmission line matching structure coupled in series to another T-shaped transmission line matching structure,
• wherein each T-shaped transmission line matching structure includes a first portion, a second portion, and a third portion coupled between the first portion and the second portion,
• wherein the first portion of a first T-shaped transmission line matching structure within the plurality of T-shaped transmission line structures forms an input of the MBMC matching network, the second portion of a second T-shaped transmission line matching structure within the plurality of T-shaped transmission line matching structures forms an output of the MBMC matching network, and the third portion of at least one T-shaped transmission line matching structure within the plurality of T-shaped transmission line matching structures is couplable to electrical ground;
• and
• a rectenna that includes:
• an antenna coupled to the input of the MBMC Matching network, and
• a rectifier coupled to the output of the MBMC matching network, wherein the rectifier comprises one of an adaptively reconfigurable rectifier having a low input RF power rectifying portion, a high input RF power rectifying portion, and a set of transistors coupled to one of the high input RF power rectifying portion the low input RF power rectifying portion, the set of transistors configured for automatically transitioning the adaptively reconfigurable rectifier between a low input RF input power operating configuration and a high input RF power operating configuration based upon input RF power level, and a breakdown-protected rectifier having at least transistor-protected diode structure, the transistor-protected diode structure comprising at least one diode coupled to a transistor in a manner that protects the diode from direct exposure to negative voltages that would ordinarily cause the diode to break down in the absence of the transistor.

A wireless network comprising:

• a transmission (TX) stage configured for wirelessly transmitting electromagnetic signals;
• and
• a reception (RX) stage configured for receiving electromagnetic signals transmitted by the TX stage, the RX stage comprising one of:
• (a) a multi-band multi-channel (MBMC) matching network comprising:
• a plurality of T-shaped, transmission line matching structures, each T-shaped transmission line matching structure coupled in series to another T-shaped transmission line matching structure,
• wherein each T-shaped transmission line matching structure includes a first portion, a second portion, and a third portion coupled between the first portion and the second portion,
• wherein the first portion of a first T-shaped transmission line matching structure within the plurality of T-shaped transmission line structures forms an input of the MBMC matching network, the second portion of a second T-shaped transmission line matching structure within the plurality of T-shaped transmission line matching structures forms an output of the MBMC matching network, and the third portion of at least one T-shaped transmission line matching structure within the plurality of T-shaped transmission line matching structures is couplable to electrical ground;
• (b) an adaptively reconfigurable rectifier having a low input power rectifying portion, a high input power rectifying portion, and a set of transistors coupled to one of the high input power rectifying portion or the low input power rectifying portion, the set of transistors configured for selectively and automatically transitioning the adaptively reconfigurable rectifier between a low input power operating configuration and a high input RF power operating configuration in a manner correlated with a power level of a signal input to the RX stage;
• and
• (c) a breakdown-protected rectifier having at least one transistor-protected diode structure, the at least one transistor-protected diode structure comprising a first diode coupled to a transistor in a manner that protects the first diode from direct exposure to negative voltages that would ordinarily cause the diode to break down in the absence of the transistor.