US 10,096,975 B1 · Laterally grown edge emitting laser

Abstract

A laterally grown edge emitting laser is provided. A semiconductor structure is disposed on a substrate. A first, a second and a third III-V optical layers are sequentially and laterally grown on and from a sidewall of the semiconductor structure. A cladding semiconductor layer is disposed next to the third III-V optical layer and electrically connected to the III-V optical layer. Then, a first contact structure and a second contact structure is disposed on and electrically connected to the semiconductor structure and the cladding semiconductor layer, respectively. In the edge emitting laser, each of the first, second and third III-V optical layers may independently include a III-V semiconductor including at least one of group III elements of boron (B), gallium (Ga), aluminum (Al) and indium (In), and at least one of group V elements of nitrogen (N), phosphorus (P), arsenic (As), antimony (Sb) and bismuth (Bi). The laterally grown edge emitting laser may be integrated with a metal-oxide-semiconductor field-effect transistor (MOSFET). A method for manufacturing the laterally grown edge emitting laser is also provided.

Claims12

Dependent claims

An edge emitting laser comprising:

a substrate;
a first dielectric layer disposed on the substrate;
a semiconductor structure on the substrate at a first direction, extending in a second direction, and protruding from the substrate through the first dielectric layer in a third direction, perpendicular to the first and second directions;
a hard mask layer disposed on top of the semiconductor structure;
a first, a second and a third III-V optical layers sequentially and laterally grown on and from a sidewall of the semiconductor structure, and extending in the second direction;
a cladding semiconductor layer disposed on the substrate next to the third III-V optical layer and electrically connected to the third III-V optical layer;
a second dielectric layer disposed on the substrate to cover the first dielectric layer, the hard mask layer, the semiconductor structure, the cladding semiconductor layer, and the first, second and third III-V optical layers;
and
a first contact structure and a second contact structure disposed on and electrically connected to the semiconductor structure and the cladding semiconductor layer, respectively.

6 more elements

Dependencies are inferred from the claim text.

Laterally grown edge emitting laser

Life of this patent

Laterally grown edge emitting laser

Life of this patent

Abstract

Claims12