Hybrid semiconductor lasers
AssigneeAlcatel-Lucent USA Inc.
InventorsPo Dong, Young-Kai Chen
Life of this patent
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Abstract
Various exemplary embodiments relate to an apparatus including: a first substrate including a planar dielectric layer on a semiconducting layer, and a silicon layer located directly on a planar surface of the dielectric layer, adjacent first and second segments of the silicon layer being optically end-coupled, the first segment being thicker than the second segment; and a second substrate including a III-V semiconductor layer segment on a top surface thereof, the first and second substrates being bonded together such that the III-V semiconductor layer segment is in direct contact with a portion of the first segment of the silicon layer.
Claims23
An apparatus comprising:
- a first substrate including a planar dielectric layer on a semiconducting layer, and a silicon layer located directly on a planar surface of the dielectric layer;
- and
- a III -V semiconductor layer in direct contact with a first segment of the silicon layer to form a hybrid optical waveguide core;
- and
- wherein a successive second segment of the silicon layer forms a silicon optical waveguide core optically end-coupled to and adjacent to an end of the hybrid optical waveguide core, the silicon layer being thicker in the hybrid waveguide core than in the silicon waveguide core;
- and
- wherein the second segment of the silicon layer having a thickness that varies by less than 10 nanometers in the silicon waveguide core.
A method of manufacturing a hybrid optical semiconductor device, comprising:
- forming an opening in a first dielectric layer to expose a part of a first silicon layer segment of a first semiconductor layer, the first silicon layer being located on a planar surface of a second dielectric on a planar surface of a first substrate;
- forming a second silicon layer on the first silicon layer in the opening;
- and
- bonding a second substrate to the first substrate such that a III-V semiconductor layer segment of the second substrate is in direct contact with an exposed surface of the second silicon layer;
- and
- wherein the bonding produces a hybrid optical waveguide core including the first silicon layer segment such that the hybrid optical waveguide core is optically end connected to an adjacent end of a silicon optical waveguide core of a remaining segment of the silicon layer.
Dependencies are inferred from the claim text.