Crossbar resistive memory array with highly conductive copper/copper alloy electrodes and silver/silver alloys electrodes

A method comprising:

• depositing a first electrode, a first metal cap, a first metal film, and a first hardmask (HM) on a silicon surface, wherein the deposited first metal film contains one or more crystal grains, wherein the one or more crystal grains in the first deposited metal film are on a sub-micron scale (10−6 meters);
• responsive to depositing the first electrode, the first metal cap, the first plated metal, and the first HM, etching:
• the deposited first HM,
• the deposited first electrode,
• the deposited first metal cap, and
• the deposited first metal film;
• coating a trench with a first dielectric material;
• responsive to coating the trench with the first dielectric material, implementing chemical mechanical planarization (CMP) on the first dielectric layer;
• depositing a resistive random access memory (RRAM) cell over the deposited first electrode;
• depositing a second electrode, a second metal cap, a second metal film, and a second hardmask (HM) over the deposited RRAM cell, wherein the deposited second metal film contains one or more crystal grains, wherein the one or more crystal grains in the second deposited metal film are on the sub-micron scale;
• responsive to depositing the second electrode, the second metal cap, the second metal film, and the second HM, patterning:
• the deposited second HM,
• the deposited second metal film, and
• the deposited second metal cap;
• depositing a spacer over the second HM, wherein the spacer is etched in order to provide a protective layer;
• responsive to etching the spacer, coating with a second dielectric material around the etched spacer;
• and
• implementing CMP on the second dielectric material and the etched spacer.