Magnetic element and memory device

A memory device comprising:

• a magnetic element;
• a first interconnection electrically connected to one end of the magnetic element;
• a second interconnection electrically connected to other end of the magnetic element;
• and
• a controller electrically connected to the magnetic element via the first interconnection and the second interconnection,
• wherein the magnetic element comprises:
• a first stacked unit comprising:
• a first ferromagnetic layer having a first magnetization,
• a second ferromagnetic layer separated from the first ferromagnetic layer in a first direction, the second ferromagnetic layer having a second magnetization, and
• a first non-magnetic layer provided between the first ferromagnetic layer and the second ferromagnetic layer;
• and
• a third ferromagnetic layer stacked with the first stacked unit in the first direction, the third ferromagnetic layer having a third magnetization,
• wherein the third ferromagnetic layer comprises a first portion and a second portion, the first portion being provided between the second portion and the first stacked unit, a magnetic resonance frequency of the first portion being higher than a magnetic resonance frequency of the second portion, and a magnetization of the first portion and a magnetization of the second portion being antiferromagnetically coupled, and
• wherein:
• a component of the first direction of the first magnetization is larger than a component of a second direction perpendicular to the first direction of the first magnetization,
• a component of the first direction of the second magnetization is smaller than a component of the second direction of the second magnetization, and
• a component of the first direction of the third magnetization is larger than a component of the second direction of the third magnetization.