US 10,096,770 B2Granted

Magnetic memory device and method for manufacturing the same

AssigneeKabushiki Kaisha Toshiba

InventorsMariko Shimizu, Yuichi Ohsawa, Hiroaki Yoda, Hideyuki Sugiyama, Satoshi Shirotori, Altansargai Buyandalai

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Abstract

According to one embodiment, a magnetic memory device includes a metal-containing layer, a first magnetic layer, a second magnetic layer, a first intermediate layer, a third magnetic layer, a fourth magnetic layer, a second intermediate layer, and a controller. The metal-containing layer includes first, second, third, fourth, and fifth portions. The first magnetic layer is separated from the third portion. The second magnetic layer is provided between the first magnetic layer and a portion of the third portion. The first intermediate layer includes a portion provided between the first and second magnetic layers. The third magnetic layer is separated from the fourth portion. The fourth magnetic layer is provided between the third magnetic layer and a portion of the fourth portion. The second intermediate layer includes a portion provided between the third and fourth magnetic layers. The controller is electrically connected with the first portion and the second portion.

Claims21

Dependent claims

A magnetic memory device, comprising:

a metal-containing layer including a first portion, a second portion, a third portion located between the first portion and the second portion, a fourth portion located between the third portion and the second portion, and a fifth portion located between the third portion and the fourth portion, each of the first, second, third, fourth, and fifth portions extending through an entirety of the metal-containing layer in a third direction;
a first magnetic layer separated from the third portion in a first direction crossing a second direction, the second direction being from the first portion toward the second portion;
a second magnetic layer provided between the first magnetic layer and a portion of the third portion;
a first intermediate layer including a portion provided between the first magnetic layer and the second magnetic layer, the first intermediate layer being nonmagnetic;
a third magnetic layer separated from the fourth portion in the first direction;
a fourth magnetic layer provided between the third magnetic layer and a portion of the fourth portion;
a second intermediate layer including a portion provided between the third magnetic layer and the fourth magnetic layer, the second intermediate layer being nonmagnetic;
and
a controller electrically connected with the first portion and the second portion,
a length along the third direction of the third portion being longer than a length along the third direction of the second magnetic layer, the third direction crossing a plane including the first direction and the second direction,
the length along the third direction of the third portion being longer than a length along the third direction of the fifth portion,
the controller being configured to implement:
a first program operation of supplying a first program current from the first portion toward the second portion;
and
a second program operation of supplying a second program current from the second portion toward the first portion,
a first electrical resistance between the first magnetic layer and the first portion after the first program operation being different from a second electrical resistance between the first magnetic layer and the first portion after the second program operation.

13 more elements

A magnetic memory device, comprising:

a metal-containing layer including a first portion, a second portion, and a third portion located between the first portion and the second portion;
a first magnetic layer separated from the third portion in a first direction crossing a second direction, the second direction being from the first portion toward the second portion;
a second magnetic layer provided between the first magnetic layer and a portion of the third portion;
a first intermediate layer including a portion provided between the first magnetic layer and the second magnetic layer, the first intermediate layer being nonmagnetic;
and
a controller electrically connected with the first portion and the second portion,
the third portion including:
a first overlap region overlapping the second magnetic layer in the first direction;
and
a first non-overlap region not overlapping the second magnetic layer in the first direction,
a thickness along the first direction of at least a portion of the first non-overlap region being thinner than a first overlap region thickness along the first direction of the first overlap region,
the controller being configured to implement:
a first program operation of supplying a first program current from the first portion toward the second portion;
and
a second program operation of supplying a second program current from the second portion toward the first portion,
a first electrical resistance between the first magnetic layer and the first portion after the first program operation being different from a second electrical resistance between the first magnetic layer and the first portion after the second program operation.

13 more elements

A magnetic memory device, comprising:

a first metal-containing layer including a first portion, a second portion, and a first intervening portion provided between the first portion and the second portion;
a second metal-containing layer including a third portion, a fourth portion, and a second intervening portion provided between the third portion and the fourth portion, the second portion being provided between the first portion and the fourth portion, the third portion being provided between the second portion and the fourth portion;
and
a plurality of first stacked bodies, the first stacked bodies being arranged along the first metal-containing layer, one of the first stacked bodies including a first magnetic layer, a second magnetic layer, and a first intermediate layer, the first magnetic layer being separated from the first intervening portion in a first direction crossing a second direction, the second direction being from the first portion toward the second portion, the second magnetic layer being provided between the first intervening portion and the first magnetic layer, the first intermediate layer being nonmagnetic and including a portion provided between the first magnetic layer and the second magnetic layer;
a plurality of second stacked bodies, the second stacked bodies being arranged along the second metal-containing layer, one of the second stacked bodies including a third magnetic layer, a fourth magnetic layer, and a second intermediate layer, the third magnetic layer being separated from the second intervening portion in the first direction, the fourth magnetic layer being provided between the second intervening portion and the third magnetic layer, the second intermediate layer being nonmagnetic and including a portion provided between the third magnetic layer and the fourth magnetic layer;
a third stacked body including a fifth magnetic layer and being provided between the first stacked bodies and the second stacked bodies;
and
a controller electrically connected with the first to fourth portions, the first stacked bodies, and the second stacked bodies,
the controller being configured to implement:
a first program operation of supplying a first program current from the first portion toward the second portion;
and
a second program operation of supplying a second program current from the second portion toward the first portion,
a first electrical resistance between the first magnetic layer and one of the first portion or the second portion after the first program operation being different from a second electrical resistance between the first magnetic layer and the one of the first portion or the second portion after the second program operation,
the controller being configured to implement:
a third program operation of supplying a third program current from the third portion toward the fourth portion;
and
a fourth program operation of supplying a fourth program current from the fourth portion toward the third portion,
a third electrical resistance between the third magnetic layer and one of the third portion or the fourth portion after the third program operation being different from a fourth electrical resistance between the third magnetic layer and the one of the third portion or the fourth portion after the second program operation.

15 more elements

A magnetic memory device, comprising:

a metal-containing layer including a first portion, a second portion, a third portion located between the first portion and the second portion, a fourth portion located between the third portion and the second portion, and a fifth portion located between the third portion and the fourth portion;
a first magnetic layer separated from the third portion in a first direction crossing a second direction, the second direction being from the first portion toward the second portion;
a second magnetic layer provided between the first magnetic layer and a portion of the third portion;
a first intermediate layer including a portion provided between the first magnetic layer and the second magnetic layer, the first intermediate layer being nonmagnetic;
a third magnetic layer separated from the fourth portion in the first direction;
a fourth magnetic layer provided between the third magnetic layer and a portion of the fourth portion;
a second intermediate layer including a portion provided between the third magnetic layer and the fourth magnetic layer, the second intermediate layer being nonmagnetic;
and
a controller electrically connected with the first portion and the second portion,
a length along a third direction of the third portion being longer than a length along the third direction of the second magnetic layer, the third direction crossing a plane including the first direction and the second direction,
the length along the third direction of the third portion being longer than a length along the third direction of the fifth portion,
the controller being configured to implement:
a first program operation of supplying a first program current from the first portion toward the second portion;
and
a second program operation of supplying a second program current from the second portion toward the first portion,
a first electrical resistance between the first magnetic layer and the first portion after the first program operation being different from a second electrical resistance between the first magnetic layer and the first portion after the second program operation,
wherein the third portion includes a first overlap region overlapping the second magnetic layer in the first direction, and
a thickness along the first direction of the fifth portion is thinner than a first overlap region thickness along the first direction of the first overlap region.

15 more elements

Dependencies are inferred from the claim text.

Facts

Application: 15/448,892Filed 3 Mar 2017
Priority: JP 2016-1540394 Aug 2016
Published: US 2018/0040812 A18 Feb 2018
Granted: 9 Oct 2018
Term ends: Not estimatedThe source records don’t support an estimate.

Classification9 codes

H10N 50/10
Galvanomagnetic devices: magnetoresistive devices
G11C 11/161
Using elements in which the storage effect is based on magnetic spin effect: details concerning the memory cell structure, e.g. the layers of the…
G11C 11/1675
Auxiliary circuits: writing or programming circuits or methods
H10B 61/22
Comprising components having three or more electrodes, e.g. transistors: of the field-effect transistor [FET] type