Light emitting diode with low refractive index material layers to reduce light guiding effects

A light-emitting diode (LED) comprising:

• at least one n-doped layer characterized by a host refractive index;
• at least one p-doped layer;
• an active region comprising of at least one layer of light-emitting material, disposed between said at least one n-doped layer and said at least one p-doped layer, characterized by an average refractive index calculated across the thickness of said active region, and characterized by an optical wavelength of emitted light;
• at least one low refractive index layer disposed within one optical wavelength of said active region, and configured to substantially reduce light guiding by said active region;
• and
• a superlattice underlying said active region, wherein said at least one low refractive index material layer is disposed within a distance from said superlattice that is less than one optical wavelength,
• wherein said average refractive index is from 0% to 5% higher than said host refractive index.