Semiconductor element and fabrication method thereof
AssigneeXiamen Sanan Optoelectronics Technology Co., Ltd.
InventorsSheng-wei Chou, Chang-cheng Chuo, Chan-chan Ling, Chia-hung Chang
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Abstract
A semiconductor element includes a super-lattice buffer layer including AlxN1-x layers and AlyO1-y layers (0<x<1, 0<y<1). The super-lattice buffer layer can mitigate corrosion to the side wall by chemical solution during chip fabrication, and improve chip yield. Fabrication the super-lattice buffer layer to achieve the effects can be realized, for example, using chemical vapor deposition (CVD).
Claims15
A semiconductor element, comprising:
- a substrate, a buffer layer, an N-type semiconductor layer, a light-emitting layer and a P-type semiconductor layer, wherein:
- the buffer layer is a super-lattice structure layer with periodically-laminated AlxN1-x layers and AlyO1-y layers (0<x<1, 0<y<1);
- and a first cycle of the super-lattice structure layer, the AlyO1-y layer is on the AlxN1-x layer.
A semiconductor element, comprising:
- a substrate, a buffer layer, an N-type semiconductor layer, a light-emitting layer and a P-type semiconductor layer, wherein:
- the buffer layer is a super-lattice structure layer with periodically-laminated AlxN1-x layers and AlyO1-y layers (0<x<1, 0<y<1), wherein:
- the super-lattice structure layer is configured to mitigate corrosion to a side wall by chemical solution during chip fabrication and improve chip yield.
A light-emitting system comprising a plurality of semiconductor elements, each semiconductor element comprising:
- a substrate, a buffer layer, an N-type semiconductor layer, a light-emitting layer and a P-type semiconductor layer, wherein:
- the buffer layer is a super-lattice structure layer with periodically-laminated AlxN1-x layers and AlyO1-y layers (0<x<1, 0<y<1);
- and a thickness of the AlxN1-x is a thickness of the AlyO1-y layer.
Dependencies are inferred from the claim text.