Anneal techniques for chalcogenide semiconductors

A multi-chamber processing apparatus, comprising:

• a sequence of chambers connected in series with an outlet of one of the chambers being connected to an inlet of an adjacent one of the chambers in the sequence and wherein, for at least a given one of the chambers, the inlet and outlet are located at opposite ends of the given chamber;
• at least one sulfur source in a first chamber in the sequence;
• at least one selenium source in a second chamber in the sequence;
• at least one tin source in a third chamber in the sequence;
• and a source of a carrier gas connected to the first chamber in the sequence;
• further comprising a sample in a last chamber in the sequence, wherein the sample contains at least one precursor component of a chalcogenide semiconductor material;
• wherein the chalcogenide semiconductor material comprises a kesterite material, and wherein the at least one precursor component of the chalcogenide semiconductor material is selected from the group consisting of:
• copper, zinc, tin, sulfur, selenium, and combinations comprising at least one of the foregoing metals;
• wherein the carrier gas is selected from the group consisting of:
• helium gas, nitrogen gas, and argon gas;
• wherein the at least one tin source comprises a tin-containing compound selected from the group consisting of:
• tin (II) sulfide, tin (IV) sulfide, tin sulfoselenide, and combinations comprising at least one of the forgoing compounds;
• wherein an only pathway for gases into and out of the chambers is through inlets and outlets interconnecting the chambers;
• and
• wherein the source of the carrier gas is a gas cylinder fitted with a pressure regulator to regulate a pressure of the carrier gas being introduced into the first chamber.