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US 10,096,736 B1Granted
P-Type chalcogenide and n-type silicon heterojunction infared photodiodes and method of manufacturing thereof
AssigneeHRL Laboratories, LLC
InventorsJeong-Sun Moon, Hwa Chang Seo
Life of this patent
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Abstract
A photodetector comprising a region of a p-type phase-change chalcogenide material forming a heterojunction with a region of n-type Silicon; wherein the p-type phase-change chalcogenide material comprises one of GeTe and SbTe.
Claims15
A method of manufacturing a photodetector, the method comprising:
- providing a region of n-type Silicon having top and bottom surfaces;
- forming one of a layer of crystalline p-type phase-change chalcogenide material and a layer of polycrystalline p-type phase-change chalcogenide material on the top surface of the region of n-type Silicon;
- wherein the p-type phase-change chalcogenide material comprises one of GeTe and SbTe.
A method of manufacturing a photodetector, the method comprising:
- providing a region of n-type Silicon having top and bottom surfaces;
- forming one of a layer of crystalline p-type phase-change chalcogenide material and a layer of polycrystalline p-type phase-change chalcogenide material on the top surface and in direct contact with of the region of n-type Silicon.
Dependencies are inferred from the claim text.