Semiconductor device
AssigneeNuvoton Technology Corporation
InventorsVivek Ningaraju, Po-An Chen, Subramanya Jayasheela Rao
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Abstract
A semiconductor device including a substrate, an isolation structure, a diode element, and a first metal layer is provided. The isolation structure is located in the substrate. The diode element is located on the isolation structure. The diode element includes a p-type doped region, an n-type doped region, and an intrinsic region, and the intrinsic region is located between the p-type doped region and the n-type doped region. The p-type doped region and the n-type doped region located on two sides of the diode element respectively form ohmic contacts. The first metal layer and the intrinsic region of the diode element are electrically connected and form a Schottky contact, so as to constitute at least one Schottky barrier diode.
Claims8
A semiconductor device, comprising:
- a substrate;
- an isolation structure located in the substrate;
- a diode element located on the isolation structure, wherein the diode element comprises a p-type doped region, an n-type doped region, and an intrinsic region, the intrinsic region is located between the p-type doped region and the n-type doped region, and the p-type doped region and the n-typed doped region located on two sides of the diode element respectively form ohmic contacts;
- and
- a first metal layer, electrically connected to the intrinsic region of the diode element, the first metal layer and the intrinsic region of the diode element forming a Schottky contact, so as to constitute at least one Schottky barrier diode.
Dependencies are inferred from the claim text.