Semiconductor device and method of forming the same
AssigneeMacronix International Co., Ltd.
InventorsChun-Ming Chiou, Cheng-Chi Lin
Life of this patent
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Abstract
A semiconductor device having a fast recovery diode (FRD) is provided. The semiconductor device includes a substrate, a first well region disposed in the substrate, a base region disposed in the first well region, a first impurity region of a first conductivity type disposed in the base region, a second impurity region of a second conductivity type disposed in the first well region and separated from the base region, a first electrode electrically connected to the base region and the first impurity region, and a second electrode electrically connected to the second impurity region.
Claims14
A semiconductor device having a fast recovery diode (FRD), the semiconductor device comprising:
- a substrate;
- a first well region, disposed in the substrate;
- a base region, disposed in the first well region;
- a first impurity region of a first conductivity type, disposed in the base region;
- a second impurity region of a second conductivity type, disposed in the first well region and separated from the base region,
- a first electrode, physically connected to the base region and the first impurity region;
- and
- a second electrode, electrically connected to the second impurity region,
- wherein the base region and the first well region are of the same conductivity type.
A method of forming a semiconductor device having a fast recovery diode (FRD), comprising:
- forming a barrier layer in a substrate;
- forming a first well region in the substrate and above the barrier layer;
- forming a second well region in the substrate and surrounding the first well region;
- forming a base region in the first well region;
- forming a first impurity region of a first conductivity type in the base region and forming a second impurity region of a second conductivity type in the first well region;
- forming a dielectric layer over the substrate;
- and
- forming a first electrode through the dielectric layer and physically connected to the base region and the first impurity region,
- wherein the second impurity region is separated from the base region, and
- wherein the base region and the first well region are of the same conductivity type.
Dependencies are inferred from the claim text.