US 10,096,721 B2Granted

Semiconductor device, module, and electronic device

AssigneeSemiconductor Energy Laboratory Co., Ltd.

InventorsShunpei Yamazaki, Kenichi Okazaki, Masataka Nakada, Masahiro Katayama

Life of this patent

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Abstract

To provide a semiconductor device with small parasitic capacitance. Alternatively, to provide a semiconductor device with low power consumption. The semiconductor device includes a transistor and a capacitor. The transistor includes a first conductor, a first insulator over the first conductor, a semiconductor including a region overlapping with the first conductor with the first insulator interposed therebetween, a second insulator over the semiconductor, a second conductor including a region overlapping with the semiconductor with the second insulator interposed therebetween, and a third conductor and a fourth conductor including a region in contact with a top surface of the semiconductor. The capacitor includes a layer formed from the same layer as the first conductor and a layer formed from the same layer as the third conductor and the fourth conductor.

Claims24

Dependent claims

A semiconductor device comprising:

a first conductor and a second conductor;
a first insulator in contact with a top surface of the first conductor and a top surface of the second conductor;
a second insulator over the first insulator;
an oxide semiconductor overlapping with the first conductor with the first insulator and the second insulator interposed therebetween;
a third insulator over the oxide semiconductor;
a third conductor overlapping with the oxide semiconductor with the third insulator interposed therebetween;
a fourth insulator over and in contact with the third conductor, a side surface of the third insulator, the oxide semiconductor, and the first insulator;
a fifth insulator over the fourth insulator;
a fourth conductor in contact with the oxide semiconductor;
a fifth conductor in contact with the oxide semiconductor;
and
a sixth conductor overlapping with the second conductor with the first insulator and the fourth insulator interposed therebetween,
wherein the second insulator has an opening,
wherein the fourth insulator is in direct contact with a side surface of the second insulator, and
wherein the fourth insulator comprises a nitride insulating film.

12 more elements

A semiconductor device comprising:

a first conductor and a second conductor;
a first insulator in contact with a top surface of the first conductor and a top surface of the second conductor;
an oxide semiconductor overlapping with the first conductor with the first insulator interposed therebetween;
a second insulator over the oxide semiconductor;
a third conductor overlapping with the oxide semiconductor with the second insulator interposed therebetween;
a third insulator over and in direct contact with the third conductor, a side surface of the second insulator, the oxide semiconductor, and the first insulator;
a fourth conductor in contact with the oxide semiconductor;
a fifth conductor in contact with the oxide semiconductor;
and
a sixth conductor overlapping with the second conductor with the first insulator and the third insulator interposed therebetween,
wherein a material of the sixth conductor is the same as a material of the fourth conductor, and
wherein the third insulator comprises a nitride insulating film.

9 more elements

Dependencies are inferred from the claim text.

Facts

Application: 15/609,405Filed 31 May 2017 · continuation
Priority: JP 2014-0205425 Feb 2014
Published: US 2017/0271520 A121 Sep 2017
Granted: 9 Oct 2018
Term ends: Not estimatedThe source records don’t support an estimate.

Classification7 codes

H10D 30/6755
Characterised by the active materials: oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
H10D 30/6734
Multi-gate TFTs: having gate electrodes arranged on both top and bottom sides of the channel, e.g. dual-gate TFTs
H10D 30/6757
Thin-film transistors [TFT]: characterised by the structure of the channel, e.g. transverse or longitudinal shape or doping profile
H10D 86/423
Having a particular composition, shape or crystalline structure of the active layer: comprising semiconductor materials not belonging to the Group…

Family

Application14/610,383Parent of this continuation · filed 30 Jan 2015
US 2017/0271520 A1Pre-grant publication · published 21 Sep 2017
US 9,705,002 B2Parent of this continuation
US 2015/0221775 A1Published application
US 10,096,721 B2This patent

From the US filing history. Foreign family members aren’t listed.