Silicon-containing, tunneling field-effect transistor including III-N source
AssigneeInternational Business Machines Corporation
InventorsAnirban Basu, Bahman Hekmatshoartabari, Davood Shahrjerdi
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Abstract
Tunneling field-effect transistors including silicon, germanium or silicon germanium channels and III-N source regions are provided for low power operations. A broken-band heterojunction is formed by the source and channel regions of the transistors. Fabrication methods include selective anisotropic wet-etching of a silicon substrate followed by epitaxial deposition of III-N material and/or germanium implantation of the substrate followed by the epitaxial deposition of the III-N material.
Claims13
A tunneling field-effect transistor comprising:
- a crystalline SixGe1-x substrate;
- a source region comprised of an epitaxial n-type III-N material;
- a p-type drain region;
- a p-type SixGe1-x channel region comprised of a portion of the crystalline SixGe1-x substrate, the channel region being operatively associated with the source and drain regions and forming a broken-band heterojunction with the source region, wherein x is 0, 1, or between 0 and 1, the n-type, III-N material has an electron affinity larger than the hole affinity of the channel region, and the drain region has a higher p-type conductivity than the channel region;
- a gate electrode, and
- a gate dielectric layer between the gate electrode and the channel region.
A tunneling field-effect transistor comprising:
- an n-type source region consisting essentially of InyGa1-yN having a doping level of 1×1019 cm−3 or higher, wherein y is less than 0.46;
- a p-type drain region;
- a p-type channel region consisting essentially of crystalline SixGe1-x wherein x is less than one, the channel region being operatively associated with the source and drain regions and forming a broken-band heterojunction with the source region, the source region having an electron affinity larger than the hole affinity of the channel region, and the drain region having a higher p-type conductivity than the channel region;
- a gate electrode, and
- a gate dielectric layer between the gate electrode and the channel region.
A tunneling field-effect transistor comprising:
- an n-type source region consisting essentially of InyGa1-yN wherein y is about 0.46;
- a p-type drain region;
- a p-type channel region consisting essentially of crystalline silicon, the channel region being operatively associated with the source and drain regions and forming a broken-band heterojunction with the source region, the source region having an electron affinity larger than the hole affinity of the channel region, and the drain region having a higher p-type conductivity than the channel region;
- a gate electrode, and
- a gate dielectric layer between the gate electrode and the channel region.
Dependencies are inferred from the claim text.