Enhanced substrate contact for MOS transistor in an SOI substrate, in particular an FDSOI substrate
AssigneeSTMicroelectronics S.r.l.
InventorsSotirios Athanasiou, Philippe Galy
Life of this patent
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Abstract
An integrated electronic device includes a semiconductive film above a buried insulating layer that is situated above a supporting substrate. An active zone is delimited within the semiconductive film. A MOS transistor supported within the active zone includes a gate region situated above the active zone. The gate region includes a rectilinear part situated between source and drain regions. The gate region further includes a forked part extending from the rectilinear part. A raised semiconductive region situated above the active zone is positioned at least partly between portions of the forked part. A substrate contact for the transistor is electrically coupled to the raised semiconductive region.
Claims17
A method for producing at least one substrate contact for an MOS transistor produced in and on an active zone of a substrate of silicon on insulator type, comprising:
- forming on top of the active zone a gate region of the transistor having a rectilinear part situated between source and drain regions of the transistor and extended by a first forked part which includes a first part extending perpendicular to the rectilinear part over a portion of the semiconductor film where the source and drain regions are not present, a second part extending perpendicular to the first part, and a third part extending perpendicular to the first part and spaced apart from said second part;
- forming at least one first raised semiconductive region above the active zone and at least partly positioned between the second and third parts of said first forked part;
- and
- forming said at least one substrate contact electrically coupled to said at least one first raised semiconductive region.
An integrated electronic device, comprising:
- a semiconductive film above a buried insulating layer which is situated above a supporting substrate,
- an active zone within the semiconductive film,
- at least one first MOS transistor produced in and on the active zone and comprising a gate region situated above the active zone, the gate region having a rectilinear part situated between source and drain regions, and at least one first forked part which extends the rectilinear part and includes a first part extending perpendicular to the rectilinear part over a portion of the semiconductor film where the source and drain regions are not present, a second part extending perpendicular to the first part, and a third part extending perpendicular to the first part and spaced apart from said second part,
- at least one first raised semiconductive region situated above the active zone and at least partly positioned between the second and third parts of said first forked part, and
- at least one first substrate contact for the first transistor electrically coupled to said first raised semiconductive region.
An integrated electronic device, comprising:
- a semiconductive film above a buried insulating layer which is situated above a supporting substrate,
- an active zone within the semiconductive film,
- at least one first MOS transistor produced in and on the active zone and comprising a gate region situated above the active zone, the gate region having a rectilinear part situated between source and drain regions, and at least one first forked part which extends the rectilinear part, wherein the forked part comprises:
- an extension extending at right angles on either side of the rectilinear part out of the source and drain regions,
- a first branch connected to said extension and extending in the extension of the source region, and
- a second branch connected to said extension and extending in the extension of the drain region,
- at least one first raised semiconductive region situated above the active zone, wherein the at least one first raised semiconductive region extends at least partly between the first branch and second branch, and
- at least one first substrate contact for the first transistor electrically coupled to said first raised semiconductive region.
A device, comprising:
- a semiconductive film above a buried insulating layer which is situated above a supporting substrate,
- an active zone within the semiconductive film including an elongated source region, an elongated drain region extending in parallel with the elongate source region and a channel region between the elongated source and drain regions,
- a gate region comprising:
- a first rectilinear part extending over the channel region parallel to the elongated source and drain regions,
- a second rectilinear part extending perpendicular to the first rectilinear part over a portion of the semiconductor film where the elongated source and drain regions are not present,
- a third rectilinear part extending perpendicular to the second rectilinear part over said portion of the semiconductor film, and
- a fourth rectilinear part extending perpendicular to the second rectilinear part over said portion of the semiconductor film and spaced apart from said third rectilinear part,
- an epitaxial region on said portion of the semiconductor film and located between the third and fourth rectilinear parts, and
- a substrate contact for the transistor electrically coupled to said epitaxial region.
Dependencies are inferred from the claim text.