Semiconductor device having a non-depletable doping region

A semiconductor device, comprising:

• a vertical electrical element arrangement enabling a current flow between a front side and a back side of a semiconductor substrate of the semiconductor device;
• and
• a non-depletable doping region extending laterally from an edge of a cell region of the semiconductor substrate towards an edge of the semiconductor substrate, wherein the non-depletable doping region comprises a doping non-depletable by voltages applied to the semiconductor device during a blocking operation,
• wherein the non-depletable doping region comprises a first conductivity type,
• wherein the non-depletable doping region comprises a maximal doping concentration at an area close to the cell region and a lower doping concentration of at least 10% of the maximal doping concentration of the non-depletable doping region at a lateral distance of more than 20 μm to a closest contact area between the semiconductor substrate and an electrically conductive contact structure of the vertical electrical element arrangement within the cell region, at a lateral distance of more than a depth of a drift zone of the vertical electrical element arrangement to a closest contact area between the semiconductor substrate and the electrically conductive contact structure of the vertical electrical element arrangement within the cell region, or at a position located closer to the edge of the semiconductor substrate than a gate field plate implemented by a lowest electrically conductive layer.