Semiconductor device and method of manufacturing semiconductor device

A method of manufacturing a semiconductor device including an active region disposed on a semiconductor substrate of a first conductivity type and formed from a semiconductor material having a band gap that is wider than that of silicon, and an edge termination region surrounding a periphery of the active region, the method comprising:

• forming on a front surface of the semiconductor substrate, a recess where the edge termination region is lower than the active region;
• selectively forming on a front surface side of the semiconductor substrate in the active region, a first semiconductor region of a second conductivity type, the first semiconductor region formed to extend under a first face formed in the edge termination region by the recess;
• and
• forming in the first face, semiconductor regions of the second conductivity type, the semiconductor regions formed to have a concentric ring-shape surrounding the periphery of the active region and to have progressively lower impurity concentrations as proximity to an outer side increases, wherein
• forming the semiconductor regions of the second conductivity type includes forming an innermost semiconductor region among the semiconductor regions of the second conductivity type from the first face, along a third face between the first face and a second face farther on the active region side than the recess,
• forming an upper portion of the innermost semiconductor region to overlap, in a depth direction, a portion of the first semiconductor region, at a boundary of the first face and the third face, and
• forming a lower portion of the innermost semiconductor region to extend farther in the depth direction than the upper portion.