Field-stop reverse conducting insulated gate bipolar transistor and manufacturing method therefor

A manufacturing method of a field stop reverse conducting insulated gate bipolar transistor, comprising the following steps:

• step A, providing an N-type substrate, regarding a side of the substrate as a back side, forming an N-type field stop layer at the back side;
• step B, performing a first phrase front side process;
• which comprising forming a high voltage-resisting structure at a terminal structure peripheral to a front side of the substrate of the field stop reverse conducting insulated gate bipolar transistor, forming a gate oxide layer at a front surface of a substrate of a active region area surrounded by the terminal structure, and forming a polysilicon gate at a surface of the gate oxide layer, forming a P well in the active region area at the front side of the substrate, forming an N-type emitter in the P well, forming a silicon oxide layer covering the front side of the substrate and the polysilicon gate;
• step C, forming a back side P-type structure at a side of the field stop layer away from the substrate;
• step D, performing a second phrase front side process;
• which comprising photoetching and etching the silicon oxide layer, forming a contact hole having a part of the P well and the emitter exposing, filling an emitter metal structure in the contact hole, forming a passivation layer covering the silicon oxide layer and the emitter metal structure;
• and
• step E, forming a plurality of notches in the active region area through the back side P-type structure into the field stop layer, and forming a back side metal layer, wherein the back side metal layer is filled in the plurality of notches to form a metal structure extending in the field stop layer.