Method and structure for forming dielectric isolated FinFET with improved source/drain epitaxy
AssigneeInternational Business Machines Corporation
InventorsKangguo Cheng, Juntao Li
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Abstract
Described herein is a FinFET device in which epitaxial layers of semiconductor material are formed in the source/drain regions on dielectrically isolated fin portions. The fin portions are located within a dielectric layer that is deposited on a semiconductor substrate. Surfaces of the fin portions are oriented in the {100} lattice plane of the crystalline material of the fin portions, providing for good epitaxial growth. Further described are methods for forming the FinFET device.
Claims14
A method for forming a field effect transistor (FinFET) device, comprising:
- oxidizing lower portions of semiconductor fins in a dielectric layer contacting the lower portions;
- annealing to remove upper portions of the fins above fin portions within the dielectric layer, the fin portions within the dielectric layer being dielectrically isolated from each other by the dielectric layer;
- and
- forming epitaxial semiconductor material on seed surfaces of the fin portions that are within the dielectric layer.
A method for forming a field effect transistor (FinFET) device, comprising:
- forming fins from a semiconductor substrate;
- oxidizing a lower portion of the fins in contact with a dielectric layer while upper portions of the fins are protected;
- exposing the upper portions of the fins;
- annealing to remove the upper portions of the fins above fin portions within the dielectric layer, the fin portions within the dielectric layer being dielectrically isolated from each other by the dielectric layer;
- and
- forming epitaxial semiconductor material on seed surfaces of the fin portions that are within the dielectric layer.
Dependencies are inferred from the claim text.