III-V FIN generation by lateral growth on silicon sidewall
AssigneeInternational Business Machines Corporation
InventorsSanghoon Lee, Brent A. Wacaser, Devendra K. Sadana, Effendi Leobandung
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Abstract
A method comprises providing a structure defined by a silicon material on a buried oxide layer of a substrate; causing a nucleation of a III-V material in a sidewall of the structure defined by the silicon material; adjusting a growth condition to facilitate a first growth rate of the III-V material in directions along a surface of the sidewall and a second growth rate of the III-V material in a direction laterally from the surface of the sidewall, wherein the second growth rate is less than the first growth rate; and processing the silicon material and the III-V material to form a fin.
Claims16
A method, comprising:
- providing a structure defined by a silicon material on a buried oxide layer of a substrate, the structure having at least one sidewall perpendicular to a surface of the buried oxide layer and a top surface parallel to the surface of the buried-oxide layer;
- disposing a discontinuous oxide mask on the at least one sidewall of the structure to define at least one seed area at at least one discontinuity in the oxide mask;
- causing a nucleation of a III-V material in the at least one seed area;
- adjusting a growth condition to facilitate a first growth rate of the III-V material along the sidewall and a second growth rate of the III-V material lateral to the sidewall, wherein the second growth rate is less than the first growth rate;
- processing the silicon material and the III-V material to form a fin;
- and
- disposing a gate over the formed fin.
Dependencies are inferred from the claim text.