Field effect transistors having a fin

A transistor, comprising:

• a semiconductor comprising a first surface at a first vertical level, a second surface at a second vertical level that is above the first vertical level, and sidewalls that extend from the first surface to the second surface;
• first and second source/drains in the semiconductor that extend below the first surface of the semiconductor without extending above the first surface of the semiconductor;
• a first dielectric over the first surface of the semiconductor and extending adjacent to the sidewalls of the semiconductor to have an uppermost surface at a third vertical level between the first and second surfaces of the semiconductor;
• a gate dielectric over the second surface of the semiconductor and extending adjacent to the sidewalls of the semiconductor to have a bottommost surface at the third vertical level;
• and
• a control gate over the gate dielectric and extending on either side of the sidewalls of the semiconductor to the third vertical level;
• wherein uppermost surfaces of the first and second source/drains are at the first vertical level and are below a bottommost surface of the control gate at the third vertical level.