Methods for forming metal silicide

A method for forming a metal silicide, comprising:

• providing a substrate, wherein the substrate contains silicon;
• forming a fin by etching the substrate;
• forming a gate on the fin;
• forming source and drain regions by doping in portions of fin on opposite sides of the gate;
• depositing a titanium (Ti) metal layer directly on a top portion and a plurality of side portions the portions of the fin;
• siliconizing the Ti metal layer by reaction between the Ti metal and the silicon in the fin to form a silicide;
• conducting ion implantation in the silicide with a dopant of the same type as that for the source or drain region and conducting an annealing for aggregating ions of the dopant at contact surfaces between the silicide and the fin:
• and removing unreacted Ti metal layer.