Integrated circuit device and method of manufacturing the same

An integrated circuit device comprising:

• a fin type active area protruding in a vertical direction from a substrate and extending in a first direction;
• at least one nanosheet stack structure facing and spaced apart from an upper surface of the fin type active area, the at least one nanosheet stack structure comprising a plurality of nanosheets each having a channel area;
• at least one gate disposed on the fin type active area and covering the at least one nanosheet stack structure, the at least one gate extending in a direction crossing the first direction;
• at least one gate dielectric layer disposed between the at least one nanosheet stack structure and the at least one gate;
• source and drain regions connected to the plurality of nanosheets;
• and
• insulating spacers each having at least a triple layer structure, contacting the source and drain regions in spaces between the plurality of nanosheets, and not overlapping the source and drain regions in the vertical direction.

An integrated circuit device, comprising:

• a substrate;
• a fin type active area that protrudes in a vertical direction from the substrate;
• a plurality of source and drain regions on the in type active area;
• a plurality of nanosheets that are adjacent to the plurality of source and drain regions, the plurality of source and drain regions being respectively connected to opposing ends of the plurality of nanosheets;
• and
• a plurality of insulating spacers between ones of the plurality of nanosheets, each of the plurality of insulating spacers having at least a triple layer structure and not overlapping the plurality of source and drain regions in the vertical direction.