Semiconductor device and method of fabricating the same

A semiconductor device comprising:

• a substrate which comprises a first surface and a second surface facing the first surface;
• an epitaxial layer which is formed on the first surface of the substrate and has a first conductivity type;
• a base region which is formed in the epitaxial layer and has a second conductivity type different from the first conductivity type;
• a gate trench which is formed in the epitaxial layer to be spaced apart from the base region;
• a source region which is formed in the base region and has the first conductivity type;
• a channel region which is formed in the base region to be spaced apart from the source region and the gate trench, and has the first conductivity type;
• and
• a barrier region which is formed between the source region and the channel region and has the second conductivity type.