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US 10,096,678 B2Granted
Methods for coating semiconductor nanocrystals
AssigneeSamsung Electronics Co., Ltd.
InventorsCraig Breen, Wenhao Liu
Life of this patent
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Abstract
A coated quantum dot and methods of making coated quantum dots are provided.
Claims9
A method of making quantum dots having a coating thereon comprising:
- providing a reaction mixture including core quantum dots free of phosphonic acid or metal phosphonate species at the surfaces of the core quantum dots, one or more metal carboxylates and one or more chalcogenide sources at a temperature of greater than 240° C. to form a first coating on the core quantum dots from the metal carboxylate and chalcogenide source without addition of phosphine based compounds to form first coated quantum dots, wherein the metal and chalcogenide of the first coating are the same or different from elements included in the core;
- and
- combining one or more metal precursors and one or more chalcogen precursors with the first coated quantum dots at a temperature of greater than 280° C. to form a second coating on the first coated quantum dots from the one or more metals and one or more chalcogens included in the precursors, wherein the one or more metals and one or more chalcogens included in the second coating comprises a composition that is different from the composition of at least one of the core or the first coating.
Dependencies are inferred from the claim text.