Methods for forming a semiconductor device and a semiconductor device

A method for forming a semiconductor device, the method comprising:

• generating hydrogen-related donors, including implanting a predefined dose of protons into a semiconductor substrate to generate the hydrogen-related donors;
• and
• controlling a temperature of the semiconductor substrate during the implantation of the predefined dose of protons so that the temperature of the semiconductor substrate is within a target temperature range for more than 70% of an implant process time used for implanting the predefined dose of protons, wherein the target temperature range reaches from a lower target temperature limit to an upper target temperature limit, wherein the lower target temperature limit is equal to a target temperature minus 30° C. and the upper target temperature limit is equal to the target temperature plus 30° C., and wherein the target temperature is higher than 80° C.