Array substrate, method for manufacturing array substrate, and display device

A display device comprising an array substrate, wherein the array substrate comprises a plurality of pixel groups,

• wherein each of the pixel groups comprises a plurality of sub-pixels, each of the sub-pixels comprises a light-emitting region and a light-emitting layer absent region, light is not generated in the light-emitting layer absent region, and the light-emitting layer absent regions of the plurality of sub-pixels in each of the pixel groups define a first region;
• wherein a photosensitive unit is arranged on each first region, configured to generate an electrical signal based on an intensity of sensed external light, and comprises a photosensitive transistor;
• and
• wherein a driving transistor is arranged on the light-emitting region, a pixel definition layer is formed on the light-emitting layer absent region, and beneath the pixel definition layer, a first electrode of each sub-pixel is electrically connected to a source electrode or a drain electrode of the driving transistor of the sub-pixel through a via hole, and the first electrode of each sub-pixel is on a same layer as a source electrode and a drain electrode of the photosensitive transistor.

A method for manufacturing an array substrate, comprising steps of:

• forming driving transistors of predetermined sub-pixels;
• and
• forming a photosensitive unit on a first region defined by respective predetermined light-emitting layer absent regions of a plurality of predetermined sub-pixels included in one pixel group, wherein the photosensitive unit is configured to generate an electrical signal based on an intensity of sensed external light, and light is not generated in the light-emitting layer absent regions,
• wherein the step of forming the photosensitive unit comprises steps of:
• forming a gate electrode of a photosensitive transistor on a passivation layer;
• forming a planarization layer;
• forming a source electrode and a drain electrode of the photosensitive transistor on the planarization layer;
• forming a photosensitive active layer on the source electrode and the drain electrode;
• and
• forming a pixel definition layer, wherein at least a portion of a channel region of the photosensitive active layer is not covered by the pixel definition layer.