Manufacturing method for complementary TFT device and manufacturing method for OLED display panel

A manufacturing method for organic light-emitting diode (OLED) display panel, comprising the steps of:

• Step 1′:
• providing a substrate, forming a first gate, a first electrode, a second electrode, and a capacitor lower electrode plate on the substrate, distributed with gaps in-between;
• Step 2′:
• forming, in subsequent order, a stack of a second active layer, a second gate dielectric layer, and a second gate at a gap area between the first electrode and the second electrode, and a portion of the gap area near the first electrode and the second electrode;
• Step 3′:
• covering the substrate, the first gate, the first electrode, the second electrode, the second gate with a first gate dielectric layer, patternizing the first gate dielectric layer to respectively form a first via above the first electrode and a second via above the second gate, the first via and the second via respectively exposing a portion of the first electrode and a portion of the second gate;
• Step 4′:
• forming a first active layer on the first gate dielectric layer above the first gate;
• Step 5′:
• on the first gate dielectric layer, forming a third electrode and a fourth electrode contacting respectively with two ends of the first active layer, and a capacitor upper electrode plate above the capacitor lower electrode plate, the fourth electrode contacting the first electrode through the first via, and the capacitor upper electrode plate contacting the second gate through the second via;
• Step 6′:
• forming a planarization layer, on the third electrode, the fourth electrode, the capacitor upper electrode plate, the first active layer, and the first gate dielectric layer;
• forming on the planarization layer, in subsequent order of, a pixel electrode, a pixel definition layer and an organic light-emitting layer;
• wherein one of the first active layer and the second active layer being an N-type channel active layer and the other being a P-type channel active layer;
• one of the first active layer and the second active layer being a metal oxide semiconductor active layer and the other being an organic semiconductor active layer;
• manufacturing process for the metal oxide semiconductor active layer comprising:
• disposing a metal oxide semiconductor precursor solution in an area to be formed to form a metal oxide semiconductor precursor thin film, annealing the metal oxide semiconductor precursor thin film to form a metal oxide semiconductor thin film, patternizing the metal oxide semiconductor thin film to form a metal oxide semiconductor active layer;
• manufacturing process for the organic semiconductor active layer comprising:
• disposing an organic semiconductor solution, baking the organic semiconductor solution to obtain an organic semiconductor thin film, and patternizing the organic semiconductor film to obtain an organic semiconductor active layer.

A manufacturing method for complementary thin film transistor (TFT) device, comprising the steps of:

• Step 1:
• providing a substrate, forming a first gate, a first electrode and a second electrode on the substrate, distributed with gaps in-between;
• Step 2:
• forming, in subsequent order, a stack of a second active layer, a second gate dielectric layer, and a second gate at a gap area between the first electrode and the second electrode, and a portion of the gap area near the first electrode and the second electrode;
• Step 3:
• covering the substrate, the first gate, the first electrode, the second electrode, the second gate with a first gate dielectric layer, patternizing the first gate dielectric layer to form a via above the first electrode to expose a portion of the first electrode;
• Step 4:
• forming a first active layer on the first gate dielectric layer above the first gate;
• Step 5:
• forming a third electrode and a fourth electrode contacting respectively with two ends of the first active layer on the first gate dielectric layer, the fourth electrode contacting the first electrode through the via;
• wherein one of the first active layer and the second active layer being an N-type channel active layer and the other being a P-type channel active layer;
• one of the first active layer and the second active layer being a metal oxide semiconductor active layer and the other being an organic semiconductor active layer;
• manufacturing process for the metal oxide semiconductor active layer comprising:
• disposing a metal oxide semiconductor precursor solution in an area to be formed to form a metal oxide semiconductor precursor thin film, annealing the metal oxide semiconductor precursor thin film to form a metal oxide semiconductor thin film, patternizing the metal oxide semiconductor thin film to form a metal oxide semiconductor active layer;
• manufacturing process for the organic semiconductor active layer comprising:
• disposing an organic semiconductor solution, baking the organic semiconductor solution to obtain an organic semiconductor thin film, and patternizing the organic semiconductor film to obtain an organic semiconductor active layer;
• wherein the first active layer being an N-type channel metal oxide semiconductor active layer, and the second active layer being a P-type channel organic semiconductor active layer;
• wherein Step 2 specifically comprising:
• using a solution coating process and a baking process sequentially to obtain a P-type organic semiconductor thin film covering the substrate, the first gate, the first electrode, and the second electrode, and an organic dielectric material thin film on the P-type organic semiconductor thin film;
• using a vapor deposition process or a sputtering process on the organic dielectric material thin film to form a metal thin film covering the organic dielectric material thin film, patternizing the metal thin film to obtain the second gate, using the second gate as a mask to perform dry etching simultaneously on the P-type organic semiconductor thin film and the organic dielectric material thin film to obtain the second active layer and the second gate dielectric layer;
• wherein Step 4 specifically comprising:
• coating an N-type metal oxide semiconductor precursor solution on the first gate dielectric layer to form an N-type metal oxide semiconductor precursor thin film, annealing the N-type metal oxide semiconductor precursor thin film to obtain an N-type metal oxide semiconductor thin film, patternizing the N-type metal oxide semiconductor thin film to obtain the first active layer.