Resistive memory devices and arrays

A resistive memory array, comprising:

• a bottom electrode;
• a first top electrode crossing the bottom electrode at a non-zero angle;
• a second top electrode electrically isolated from the first top electrode and crossing the bottom electrode at an other non-zero angle;
• a first junction formed at a first cross-point of the bottom electrode and the first top electrode;
• a second junction formed at a second cross-point of the bottom electrode and the second top electrode;
• a resistive stack positioned at each of the first and second junctions, the resistive stack including:
• a memristor including oxygen or nitrogen elements;
• and
• a selector in electrical series with the memristor, the selector including a composite dielectric material of:
• a first dielectric material and a second dielectric material that different from the first dielectric material present in a ratio ranging from 1:9 to 9:1;
• and
• a dopant material including a cation having a diffusion rate faster than the oxygen or the nitrogen of the memristor, wherein a concentration of the dopant material in the composite dielectric material ranges from about 1% up to 50%;
• and
• respective first and second middle electrodes positioned between the memristor and the selector at each of the first and second junctions.