Method of manufacturing magnetoresistive random access memory device

A method of manufacturing a magnetoresistive random access memory, the method comprising:

• forming a pinned layer structure including at least one pinned layer on a substrate;
• sequentially forming a tunnel barrier layer, a free layer, and insulation barrier layer on a surface of the pinned layer structure;
• forming a vertical polarizer structure contacting the insulation barrier layer, the vertical polarizer structure including a plurality of magnetization multi-layered structures sequentially stacked, each of the magnetization multi-layered structures including a non-magnetic layer and a magnetic layer sequentially stacked, and the magnetic layer of one of the magnetization multi-layered structures has a thickness greater than thicknesses of the magnetic layers of other ones of the magnetization multi-layered structures;
• and
• applying an external magnetic field in a vertically upward direction from an upper surface of the substrate, so that the pinned layer structure and the vertical polarizer structure are magnetized, wherein the pinned layer structure includes a lower pinned layer, a spacer, and an upper pinned layer sequentially stacked, wherein one of the lower pinned layer and the upper pinned layer contacting the tunnel barrier layer has a thickness greater than a thickness of the other one of the lower pinned layer and the upper pinned layer, and wherein the magnetic layer of one of the magnetization multi-layered structures at an even-numbered level from the insulation barrier layer has a thickness greater than thicknesses of the magnetic layers of other ones of the magnetization multi-layered structures.