Light-emitting unit
AssigneeToyoda Gosei Co., Ltd.
InventorsMisato Boyama, Shingo Totani, Takashi Kawai, Yoshiki Saito, Naoyuki Okita
Life of this patent
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Abstract
To provide a light-emitting unit having a semiconductor light-emitting device with a good responsiveness and a sufficient light emission quantity. The light-emitting unit comprises a plurality of semiconductor light-emitting devices, an n-wiring electrode and a p-wiring electrode respectively connecting the semiconductor light-emitting devices in parallel, an n-pad electrode connected to the n-wiring electrode, and a p-pad electrode connected to the p-wiring electrode. At least one of the Group III nitride semiconductor light-emitting devices has a light emission volume of 1 μm3 to 14 μm3.
Claims15
A light-emitting unit comprising:
- a substrate made of sapphire;
- an n-type layer comprising Group III nitride semiconductor;
- a light-emitting layer comprising Group III nitride semiconductor;
- a p-type layer comprising Group III nitride semiconductor;
- an isolation groove electrically separating the n-type layer, the light-emitting layer comprising a well layer, and the p-type layer into a plurality of light-emitting devices on the substrate, wherein the n-type layer does not exist in and under the isolation groove, and a bottom of the isolation groove is a surface of the substrate;
- an insulation film directly contacting with and covering the surface of the substrate which is the bottom of the isolation groove, and covering side surfaces of each light-emitting device;
- an n-wiring electrode disposed on the insulation film and connecting the respective n-type layers of the respective light-emitting devices in parallel while crossing the isolation groove;
- a p-wiring electrode disposed on the insulation film and connecting the respective p-type layers of the respective light-emitting devices in parallel while crossing the isolation groove;
- an n-pad electrode connected to the n-wiring electrode;
- and
- a p-pad electrode connected to the p-wiring electrode;
- wherein each of the light-emitting devices has a light emission volume of 1 μm3 to 14 μm3, the light emission volume being defined as a total volume of the well layer effectively contributing to emit a light.
Dependencies are inferred from the claim text.