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US 10,096,641 B2Granted
CMOS image sensor
AssigneeKabushiki Kaisha Toshiba
InventorsKeiji Ikeda, Tsutomu Tezuka
Life of this patent
Estimating the term…
Abstract
According to one embodiment, a CMOS image sensor includes a photoelectric conversion element and an amplifier transistor. The photoelectric conversion element converts incident light into an electric signal. The amplifier transistor has a heterojunction in which a Ge layer and an SiGeSn layer are joined together, as a channel region and amplifies the electric signal resulting from conversion by the photoelectric conversion element.
Claims10
A CMOS image sensor comprising:
- a photoelectric conversion element configured to convert incident light into an electric signal;
- and
- an amplifier transistor including a source and a drain provided in an SiGeSn layer stacked on a Ge layer, a gate insulating layer provided on the SiGeSn layer between the source and the drain, and a gate electrode provided on the gate insulating layer,
- wherein
- the amplifier transistor includes a heterojunction as a channel region and the heterojunction is provided on an interface between the SiGeSn layer and the Ge layer, and
- the amplifier transistor is configured to amplify the electric signal resulting from a conversion by the photoelectric conversion element.
3 more elements
A CMOS image sensor comprising:
- a first photoelectric conversion element provided in a first semiconductor substrate and configured to convert incident light into a first electric signal;
- a first semiconductor layer provided in the first semiconductor substrate and configured to store the first electric signal resulting from a conversion by the first photoelectric conversion element;
- a second semiconductor substrate with an SiGeSn layer stacked on a Ge substrate;
- and
- an amplifier transistor provided on the second semiconductor substrate comprising:
- a source and a drain provided in the SiGeSn layer,
- a gate insulating layer provided on the SiGeSn layer between the source and the drain, and
- a gate electrode provided on the gate insulating layer,
- wherein
- the amplifier transistor includes a heterojunction as a channel region, the heterojunction being provided on an interface between the SiGeSn layer and the Ge substrate, and
- the amplifier transistor is configured to amplify the first electric signal stored in the first semiconductor layer.
8 more elements
Dependencies are inferred from the claim text.